Effect of surface treatment on surface recombination velocity and diode leakage current in GaP

1976 ◽  
Vol 13 (4) ◽  
pp. 908-913 ◽  
Author(s):  
G. B. Stringfellow
Keyword(s):  
Surface Treatment ◽  
Leakage Current ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Effect Of Surface

Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Yang ◽  
I. Balberg ◽  
A. Catalano ◽  
M. Bennett
Keyword(s):  
Experimental Data ◽  
Film Thickness ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Recombination ◽  
Thickness Dependence ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Hydrogenated Amorphous ◽  
Effect Of Surface

ABSTRACTMany of the photoelectronic properties of a-Si:H, including photoconductivity and ambipolar diffusion length, were observed to deteriorate rapidly with decreasing film thickness. Calculations show that the thickness dependence can be attributed mainly to the effect of surface recombination. In fact, any surface recombination velocity above 100 cm/s will result in an equally good fit to the experimental data. We conclude that the intrinsic photoelectronic properties of bulk a-Si:H and other related materials can be measured only on thick samples (≥1μm) and by using uniformly absorbing light (at long wavelengths).

The Performance of Hg0.8Cd0.2Te Photodetectors by Using Photo Surface Treatment

1997 ◽  
Vol 08 (04) ◽  
pp. 703-717 ◽  
Author(s):  
Y. K. Su ◽  
C. T. Lin
Keyword(s):  
Surface Treatment ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Lower Surface ◽  
Treatment Method ◽  
Cdte Layer ◽  
Surface Recombination Velocity ◽  
Noise Power ◽  
Cdte Passivation ◽  
Recombination Velocity

The principal aim of this paper is to propose an easy, vapor phase, and reproducible photo surface treatment method to improve the device performance of the Hg0.8Cd0.2Te photoconductive detector. Experimental results, including Auger electron spectroscopy (AES), MIS leakage current, 1/f noise voltage spectrum, 1/fknee frequency, responsivity Rλ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. We also found that the photo surface treatment in combination with thermally eveporated ZnS or CdTe layer would shift the 1/fknee under 100Hz in an electrical field under 50 V/cm, reduce the noise power spectrum, and achieve a lower surface recombination velocity S of 300 cm/sec as well as a high D* of 3 × 1010 cm [Formula: see text] for blackbody radiation. It was also found that HgCdTe photoconductor passivated with stacked layers shows improved interface properties when compared to the photoconductor passivated with a single passivation layer.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement

2005 ◽  
Vol 891 ◽  
Author(s):  
Zhimei Zhu ◽  
Elena Plis ◽  
Abdenour Amtout ◽  
Pallab Bhattacharya ◽  
Sanjay Krishna
Keyword(s):  
Infrared Detectors ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface States ◽  
Depletion Region ◽  
Surface Recombination Velocity ◽  
Diode Array ◽  
Ammonium Sulfide ◽  
Picosecond Excitation ◽  
Recombination Velocity

ABSTRACTThe effect of ammonium sulfide passivation on InAs/GaSb superlattice infrared detectors was investigated using two complementary techniques, namely, picosecond excitation correlation (PEC) measurement and variable-area diode array (VADA) surface recombination velocity (SRV) measurement. PEC measurements were conducted on etched InAs/GaSb superlattice mesas, which were passivated in aqueous ammonium sulfide solutions of various strengths for several durations. The PEC signal's decay time constant (DTC) is proportional to carrier lifetimes. At 77 K the PEC signal's DTC of the as-grown InAs/GaSb superlattice sample was 2.0 ns, while that of the unpassivated etched sample was reduced to 1.2 ns by the surface states at the mesa sidewalls. The most effective ammonium sulfide passivation process increased the PEC signal's DTC to 10.4 ns. However it is difficult to isolate surface recombination from other processes that contribute to the lifetime using the PEC data, therefore a VADA SRV measurement was undertaken to determine the effect of passivation on surface recombination. The obtained SRV in the depletion region of the InAs/GaSb superlattice and GaSb junction was 1.1×106 cm/s for the unpassivated sample and 4.6×105 cm/s for the passivated sample. At 77 K the highest R0A value measured in our passivated devices was 2540 W cm2 versus 0.22 W cm2 for the unpassivated diodes. The results of the lifetime, the SRV and the R0A measurements indicate that ammonium sulfide passivation will improve the performance of InAs/GaSb superlattice infrared detectors.

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