Effect of surface recombination velocity on the threshold current and differential quantum efficiency of the surface-emitting laser diode

1996 ◽  
Vol 32 (4) ◽  
pp. 597-606 ◽  
Author(s):  
M. Ogura ◽  
H.C. Hsieh
Keyword(s):  
Quantum Efficiency ◽  
Laser Diode ◽  
Surface Recombination ◽  
Threshold Current ◽  
Surface Recombination Velocity ◽  
Surface Emitting Laser ◽  
Recombination Velocity ◽  
Effect Of Surface

Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Yang ◽  
I. Balberg ◽  
A. Catalano ◽  
M. Bennett
Keyword(s):  
Experimental Data ◽  
Film Thickness ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Recombination ◽  
Thickness Dependence ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Hydrogenated Amorphous ◽  
Effect Of Surface

ABSTRACTMany of the photoelectronic properties of a-Si:H, including photoconductivity and ambipolar diffusion length, were observed to deteriorate rapidly with decreasing film thickness. Calculations show that the thickness dependence can be attributed mainly to the effect of surface recombination. In fact, any surface recombination velocity above 100 cm/s will result in an equally good fit to the experimental data. We conclude that the intrinsic photoelectronic properties of bulk a-Si:H and other related materials can be measured only on thick samples (≥1μm) and by using uniformly absorbing light (at long wavelengths).

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

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