In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition

2020 ◽  
Vol 38 (1) ◽  
pp. 014014
Author(s):  
Franziska Naumann ◽  
Johanna Reck ◽  
Hassan Gargouri ◽  
Bernd Gruska ◽  
Adrian Blümich ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Real Time ◽  
Spectroscopic Analysis ◽  
Atomic Layer ◽  
Ex Situ ◽  
Layer Deposition ◽  
Al2o3 Films

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Ex Situ ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of ZnO on Mesoporous Silica: Insights into Growth Behavior of ZnO via In-Situ Thermogravimetric Analysis

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 981 ◽  
Author(s):  
Piyush Ingale ◽  
Kristian Knemeyer ◽  
Mar Piernavieja Hermida ◽  
Raoul Naumann d’Alnoncourt ◽  
Arne Thomas ◽  
...  
Keyword(s):  
Thermogravimetric Analysis ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Ex Situ ◽  
Direct Access ◽  
Layer Deposition

ZnO is a remarkable material with many applications in electronics and catalysis. Atomic layer deposition (ALD) of ZnO on flat substrates is an industrially applied and well-known process. Various studies describe the growth of ZnO layers on flat substrates. However, the growth characteristics and reaction mechanisms of atomic layer deposition of ZnO on mesoporous powders have not been well studied. This study investigates the ZnO ALD process based on diethylzinc (DEZn) and water with silica powder as substrate. In-situ thermogravimetric analysis gives direct access to the growth rates and reaction mechanisms of this process. Ex-situ analytics, e.g., N2 sorption analysis, XRD, XRF, HRTEM, and STEM-EDX mapping, confirm deposition of homogenous and thin films of ZnO on SiO2. In summary, this study offers new insights into the fundamentals of an ALD process on high surface area powders.

Oxygen Vacancies at the γ-Al2O3/STO Heterointerface Grown by Atomic Layer Deposition

2015 ◽  
Vol 1730 ◽  
Author(s):  
Thong Q. Ngo ◽  
Martin D. McDaniel ◽  
Agham Posadas ◽  
Alexander A. Demkov ◽  
John G. Ekerdt
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
High Energy ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Dimensional Electron Gas

ABSTRACTWe report the epitaxial growth of γ-Al2O3 on SrTiO3 (STO) substrates by atomic layer deposition (ALD). The ALD growth of γ-Al2O3 on STO(001) single crystal substrates was performed at a temperature of 345 °C. Trimethylaluminum and water were used as co-reactants. In-situ reflection high-energy electron diffraction and ex-situ x-ray diffraction were used to determine the crystallinity of the Al2O3 films. In-situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO heterointerface. The formation of a Ti3+ feature is observed in the Ti 2p spectrum of STO after the first few ALD cycles of Al2O3 and even after exposure of the STO substrate to trimethylaluminum alone at 345 °C. The presence of a Ti3+ feature is a direct indication of oxygen vacancies at the Al2O3/STO heterointerface, which provide the carriers for the quasi-two dimensional electron gas at the interface.

scholarly journals High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1056 ◽  
Author(s):  
Ava Khosravi ◽  
Rafik Addou ◽  
Massimo Catalano ◽  
Jiyoung Kim ◽  
Robert Wallace
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Ex Situ ◽  
Half Cycle ◽  
Layer Deposition ◽  
Uv Ozone ◽  
Al2o3 Thin Film

We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials.

Atomic Layer Deposition of SrO: Substrate and Temperature Effects

2012 ◽  
Vol 1494 ◽  
pp. 179-183
Author(s):  
Han Wang ◽  
Xiaoqiang Jiang ◽  
Brian G. Willis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Ex Situ ◽  
Hydroxyl Groups ◽  
Initial Growth ◽  
X Ray ◽  
Steady Growth ◽  
Layer Deposition

ABSTRACTThe atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

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