Temperature dependence of dielectric function spectra and interband optical transitions in layered TlInS2

2019 ◽  
Vol 37 (6) ◽  
pp. 061212
Author(s):  
Yong-Gu Shim ◽  
Ryo Tashiro ◽  
Kazuki Wakita ◽  
Nazim Mamedov
Keyword(s):  
Temperature Dependence ◽  
Dielectric Function ◽  
Optical Transitions

Temperature dependence of dielectric function and optical transitions in TlInSe2 and TlGaTe2

2011 ◽  
Vol 519 (9) ◽  
pp. 2852-2854 ◽  
Author(s):  
YongGu Shim ◽  
Hitoshi Aoh ◽  
Junichi Sakamoto ◽  
Kazuki Wakita ◽  
Nazim Mamedov
Keyword(s):  
Temperature Dependence ◽  
Dielectric Function ◽  
Optical Transitions

Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC

2005 ◽  
Vol 2 (7) ◽  
pp. 2736-2739 ◽  
Author(s):  
C. W. Litton ◽  
D. C. Reynolds ◽  
J. E. Hoelscher ◽  
T. C. Collins ◽  
R. Fitch ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Optical Transitions

scholarly journals Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hoang Tung Nguyen ◽  
Van Long Le ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Xuan Au Nguyen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Energy ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Temperature Dependences ◽  
Exciton Effect ◽  
Bose Einstein ◽  
Temperature Gradient Method

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

Dielectric function and optical transitions of silicon nanocrystals between 0.6 eV and 6.5 eV

2008 ◽  
Vol 205 (4) ◽  
pp. 845-848 ◽  
Author(s):  
M. Mansour ◽  
A. En Naciri ◽  
L. Johann ◽  
J. J. Grob ◽  
M. Stchakovsky
Keyword(s):  
Dielectric Function ◽  
Silicon Nanocrystals ◽  
Optical Transitions

Temperature dependence of the dielectric function and the interband critical-point parameters of GaSb

1991 ◽  
Vol 43 (5) ◽  
pp. 4349-4360 ◽  
Author(s):  
Stefan Zollner ◽  
Miquel Garriga ◽  
Josef Humlek ◽  
Sudha Gopalan ◽  
Manuel Cardona
Keyword(s):  
Temperature Dependence ◽  
Critical Point ◽  
Dielectric Function

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry

2001 ◽  
Vol 693 ◽  
Author(s):  
N.V. Edwards ◽  
O.P.A. Lindquist ◽  
L.D. Madsen ◽  
S. Zollner ◽  
K. Järrehdahl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Vacuum Ultraviolet ◽  
Critical Assessment ◽  
Optical Transitions ◽  
Common Substrate ◽  
Materials Used

AbstractAs a first step toward enabling the in-line metrology of III-V nitride heterostructure and materials, we present the optical constants of the two common substrate materials over an unprecendented spectral range. Vacuum Ultraviolet spectroscopic ellipsometry (VUVSE) was used to obtain the optical constants for Al2O3 and the ordinary and extra-ordinary component of the dielectric function for both 4H- and 6H-SiC. The results are discussed in the context of anisotropy, polytypism, bandstructure, optical transitions, and preparation/characterization of abrupt surfaces, where appropriate.

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