New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell

2018 ◽  
Vol 36 (6) ◽  
pp. 061510 ◽  
Author(s):  
Cathy Bugot ◽  
Muriel Bouttemy ◽  
Nathanaelle Schneider ◽  
Arnaud Etcheberry ◽  
Daniel Lincot ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Atomic Layer Deposition ◽  
Thin Film Solar Cell ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

Surface Engineering Through Atomic Layer Deposition on Three-Dimensionally Structured Materials

2020 ◽  
Author(s):  
Nhi V. Quach ◽  
Quang N. Pham ◽  
Ju-Hwan Han ◽  
Youngjoon Suh ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Porous Media ◽  
Atomic Layer Deposition ◽  
Flat Surface ◽  
Atomic Layer ◽  
Surface Modifications ◽  
Inverse Opal ◽  
Porous Structures ◽  
Layer Deposition

Abstract Atomic layer deposition (ALD) is effective in depositing conformal thin films, which is highly favorable for coating various patterned surfaces. These coatings serve as barrier layers in addition to surface modifications to improve wettability of porous structures, such as meshes and membrane channels. However, it has been challenging to conformally deposit hydrophilic thin films on three-dimensionally (3D) designed, more complicated architectures. To understand the effect of surface modifications on 3D structures’ surface properties, we deposit thin silica films via ALD on hydrophobic porous media, which is nickel inverse opal structures in this case. The silica thin film is used to improve hydrophilicity without modifying the geometries of the microporous structure such as porosity, pore size, and metal type. We study the consequences of applying silica coatings to the 3D structure in comparison to flat surface counterpart. The hydrophilicity effects of ALD coating on porous structures and flat nickel surfaces are approximately the same with a result of decreasing apparent static contact angle of approximately 30°. In relation, the Fowkes method reveals the surface energy of the ALD silica samples increases by a factor of 1.3. Thermal stability of the coating is tested, revealing a relative degradation with increasing thermal cycling, most likely associated with the adsorption species on the thin film surface. The droplet spreading rate is analyzed in addition to droplet volume loss to estimate the liquid penetration rate into the structure, if any. Condensation rate and condensate growth show that despite having lower droplet nucleation in comparison to a flat surface, the droplet area growth on inverse opal regions is larger. These findings showcase potential improvements to 3D microporous structures by employing ALD coating for fluid transport through the porous media.

scholarly journals High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2434
Author(s):  
Aaron J. Austin ◽  
Elena Echeverria ◽  
Phadindra Wagle ◽  
Punya Mainali ◽  
Derek Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Buffer Layers ◽  
X Ray ◽  
1D Nanostructures ◽  
Layer Deposition ◽  
Silica Nanosprings

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

scholarly journals Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction

Catalysts ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 92 ◽  
Author(s):  
DJ Donn Matienzo ◽  
Daniel Settipani ◽  
Emanuele Instuli ◽  
Tanja Kallio
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Water Electrolysis ◽  
Atomic Layer ◽  
Alkaline Water Electrolysis ◽  
Catalytic Systems ◽  
Alkaline Water ◽  
Layer Deposition

Atomic layer deposition (ALD) is a special type of chemical vapor deposition (CVD) technique that can grow uniformed thin films on a substrate through alternate self-limiting surface reactions. Recently, the application of these thin film materials to catalytic systems has begun to attract much attention, and the capacity to deposit these catalytic films in a highly controlled manner continues to gain importance. In this study, IrO2 and NiO thin films (approximately 25 to 60 nm) were deposited on industrial Ni expanded mesh as an anode for alkaline water electrolysis. Different ALD operating parameters such as the total number of deposition cycles, sublimation and deposition temperatures, and precursors pulse and purge lengths were varied to determine their effects on the structure and the electrochemical performance of the thin film materials. Results from the electrochemical tests (6 M KOH, 80 °C, up to 10 kA/m2) showed the catalytic activity of the samples. Oxygen overpotential values (ηO2) were 20 to 60 mV lower than the bare Ni expanded mesh. In summary, the study has demonstrated the feasibility of using the ALD technique to deposit uniformed and electroactive thin films on industrial metallic substrates as anodes for alkaline water electrolysis.

Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Solar Hydrogen ◽  
Layer Deposition ◽  
Thin Film Catalysts ◽  
Post Deposition

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

scholarly journals Noble Metal Alloy Thin Films by Atomic Layer Deposition & Rapid Joule Heating

2021 ◽  
Author(s):  
Yuanyuan Guo ◽  
Yiming Zou ◽  
Chunyu Cheng ◽  
Leyan Wang ◽  
Riko I Made ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Joule Heating ◽  
Atomic Layer ◽  
Metal Alloy ◽  
Dynamics Simulation ◽  
Alloy Films ◽  
X Ray ◽  
Layer Deposition

Abstract Metal alloys are usually fabricated by melting constituent metals together or sintering metal alloy particles made by high energy ball milling (mechanical alloying). All these methods only allow for bulk alloys to be formed. This manuscript details a new method of fabricating Rhodium/Iridium (Rh/Ir) metal alloy films using atomic layer deposition (ALD) and rapid Joule heating induced alloying that gives functional thin film alloys, enabling conformal thin films with high aspect ratios on 3D nanostructured substrate. In this work, ALD was used to deposit Rh thin film on an Al2O3 substrate, followed by an Ir overlayer on top of the Rh film. The multilayered structure was then alloyed / sintered using rapid Joule heating. We can precisely control the thickness of the resultant alloy films down to the atomic scale. The Rh@Ir alloy thin films were characterized using scanning and transmission electron microscopy (SEM/TEM) and energy dispersive spectroscopy (EDS) to study their microstructural characteristics. Grazing-incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS) were also carried out to confirm the composition and formation of Rh-Ir thin film alloys. All the characterization results reveal that the Rh-Ir alloy thin film was prepared successfully with one single phase and homogeneous distribution of Rh and Ir throughout the film. Molecular Dynamics simulation experiments of Rh/Ir alloys using Large-Scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) were performed to elucidate the alloying mechanism during the rapid heating process, corroborating the experimental results.

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