scholarly journals Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

2018 ◽  
Vol 36 (4) ◽  
pp. 041201 ◽  
Author(s):  
Eddy Simoen ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Md. Gius Uddin ◽  
Ivan Gordon ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Transient Spectroscopy ◽  
Dry Etch

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

2007 ◽  
Vol 556-557 ◽  
pp. 603-606 ◽  
Author(s):  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Surface Layer ◽  
Detection Limit ◽  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Carbon Ion ◽  
Transient Spectroscopy

Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 633-636 ◽  
Author(s):  
Birgit Kallinger ◽  
Patrick Berwian ◽  
Jochen Friedrich ◽  
Mathias Rommel ◽  
Maral Azizi ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Structural Defects ◽  
Effective Lifetime ◽  
Recombination Lifetime ◽  
Photoconductivity Decay ◽  
Transient Spectroscopy

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.

scholarly journals Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 233-236
Author(s):  
Hussein M. Ayedh ◽  
Roberta Nipoti ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Carbon Vacancy ◽  
Different Temperatures ◽  
Pair Generation ◽  
High Temperature Processing ◽  
Transient Spectroscopy ◽  
And Diffusion

The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward to address the thermodynamic equilibration of VC, elucidating the possible atomistic mechanisms that control the VC equilibration under C-rich conditions. Frenkel pair generation, injection of carbon interstitials (Ci’s) from the C-rich surface, followed by recombination with VC’s, and diffusion of VC’s towards the surface appear to be the major mechanisms involved. The modelling results show a close agreement with experimental deep-level transient spectroscopy (DLTS) depth profiles of VC after annealing at different temperatures.

The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
S. Libertino ◽  
S. Coffa ◽  
R. Mosca ◽  
E. Gombia
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Erbium Ions ◽  
Donor Behaviour ◽  
Energetic Position

AbstractWe have investigated the effects of oxygen codoping and thermal annealing on the deep level spectrum and carrier lifetime of Er implanted crystalline Si. It is found that oxygen codoping produces a dramatic modification in the concentration and energetic position of Er-related deep levels in the Si band gap. In particular the formation of Er-O complexes is shown to produce a promotion from deep to shallow levels. This effect is the major responsible of the enhancement of Er donor behaviour in presence of oxygen and also produces a large increase in the minority carrier lifetime

Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

2012 ◽  
Vol 112 (5) ◽  
pp. 054508 ◽  
Author(s):  
Fa-Jun Ma ◽  
Ganesh G. Samudra ◽  
Marius Peters ◽  
Armin G. Aberle ◽  
Florian Werner ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers
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