scholarly journals Coefficient of thermal expansion and biaxial Young's modulus in Si-rich silicon nitride thin films

2018 ◽  
Vol 36 (2) ◽  
pp. 021517 ◽  
Author(s):  
Scott Habermehl
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Coefficient Of Thermal Expansion ◽  
Young's Modulus

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Size- and temperature-dependent Young's modulus and size-dependent thermal expansion coefficient of thin films

2016 ◽  
Vol 18 (31) ◽  
pp. 21508-21517 ◽  
Author(s):  
Xiao-Ye Zhou ◽  
Bao-Ling Huang ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Material Properties ◽  
Essential Role ◽  
Young's Modulus ◽  
Temperature Dependent ◽  
Size Dependent

Surfaces of nanomaterials play an essential role in size-dependent material properties.

Determination of Mechanical Properties of Thin Film on Silicon Wafer

2003 ◽  
Author(s):  
Enboa Wu ◽  
Albert J. D. Yang ◽  
Ching-An Shao ◽  
C. S. Yen
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Silicon Wafer ◽  
Coefficient Of Thermal Expansion ◽  
Young's Modulus ◽  
Poisson Ratio ◽  
Bulk State

Nondestructive determination of Young’s modulus, coefficient of thermal expansion, Poisson ratio, and thickness of a thin film has long been a difficult but important issue as the film of micrometer order thick might behave differently from that in the bulk state. In this paper, we have successfully demonstrated the capability of determining all these four parameters at one time. This novel method includes use of the digital phase-shifting reflection moire´ (DPRM) technique to record the slope of wafer warpage under temperature drop condition. In the experiment, 1-um thick aluminum was sputtered on a 6-in silicon wafer. The convolution relationship between the measured data and the mechanical properties was constructed numerically using the conventional 3D finite element code. The genetic algorithm (GA) was adopted as the searching tool for search of the optimal mechanical properties of the film. It was found that the determined data for Young’s modulus (E), Coefficient of Thermal Expansion (CTE), Poisson ratio (ν), and thickness (h) of the 1.00 um thick aluminum film were 104.2Gpa, 38.0 ppm/°C, 0.38, and 0.98 um, respectively, whereas that in the bulk state were measured to be E=71.4 Gpa, CTE=23.0 ppm/°C, and ν=0.34. The significantly larger values on the Young’s modulus and the coefficient of thermal expansion determined by this method might be attributed to the smaller dislocation density due to the thin dimension and formation of the 5-nm layer of Al2O3 formed on top of the 1-um thick sputtered film. The Young’s Modulus and the Poisson ratio of this nano-scale Al2O3 film were then determined. Their values are consistent with the physical intuition of the microstructure.

Tangguh LNG Project Statistical Young’s Modulus and Thermal Expansion Coefficient Testing of Clad Pipe Specimens

2011 ◽  
Author(s):  
Terry Griffiths ◽  
Isabel Hadley ◽  
Richard Johnson ◽  
Fabio Micari
Keyword(s):  
Thermal Expansion ◽  
Young’S Modulus ◽  
Room Temperature ◽  
Structural Reliability ◽  
Coefficient Of Thermal Expansion ◽  
Young's Modulus ◽  
Linear Thermal Expansion ◽  
Upheaval Buckling ◽  
Analysis Of Results ◽  
Mean And Variance

Material testing was undertaken on samples taken from clad pipe manufactured by JSW for the Tangguh LNG project. The test programme involved testing Young’s Modulus (E) and Coefficient of Linear Thermal Expansion (α) from room temperature to above 110° on each layer. This paper summarises testing and analysis of results which enabled mean and variance on each material property to be found. Checks were also undertaken for any correlations in properties between clad and parent layers, and between Young’s Modulus and Coefficient of Thermal Expansion. Analysis results are compared to existing industry norms and their implications for the Tangguh project UHB (Upheaval Buckling) SRA (Structural Reliability Analysis) are summarised.

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