scholarly journals Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N2

2018 ◽  
Vol 36 (2) ◽  
pp. 020602 ◽  
Author(s):  
Grzegorz Greczynski ◽  
Igor Zhirkov ◽  
Ivan Petrov ◽  
J. E. Greene ◽  
Johanna Rosen
Keyword(s):  
Transition Metals ◽  
Magnetron Sputtering ◽  
Time Evolution ◽  
High Power ◽  
Ion Fluxes ◽  
Substrate Plane

Gas rarefaction and the time evolution of long high-power impulse magnetron sputtering pulses

2012 ◽  
Vol 21 (4) ◽  
pp. 045004 ◽  
Author(s):  
Chunqing Huo ◽  
Michael A Raadu ◽  
Daniel Lundin ◽  
Jon Tomas Gudmundsson ◽  
André Anders ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Time Evolution ◽  
High Power

Modeling the high power impulse magnetron sputtering discharge

2020 ◽  
pp. 159-221 ◽  
Author(s):  
Tiberiu Minea ◽  
Tomáš Kozák ◽  
Claudiu Costin ◽  
Jon Tomas Gudmundsson ◽  
Daniel Lundin
Keyword(s):  
Magnetron Sputtering ◽  
High Power

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

On how to measure the probabilities of target atom ionization and target ion back-attraction in high-power impulse magnetron sputtering

2021 ◽  
Vol 129 (3) ◽  
pp. 033303
Author(s):  
Martin Rudolph ◽  
Hamidreza Hajihoseini ◽  
Michael A. Raadu ◽  
Jon Tomas Gudmundsson ◽  
Nils Brenning ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Target Atom ◽  
Atom Ionization

scholarly journals Reactive High-Power Impulse Magnetron Sputtering of Chromium-Carbon Films

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1269
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Carbon ◽  
High Power ◽  
Deposition Temperature ◽  
Average Power ◽  
Carbon Films ◽  
Strengthening Effect ◽  
Substrate Bias ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Chromium-carbon films were deposited by utilizing reactive high-power impulse magnetron sputtering at different mixture ratios of ethyne and argon atmosphere, and different substrate bias voltages and deposition temperature, with the same pulse frequency, duty cycle, and average power. The microstructure and mechanical properties of the obtained films were compared. The films consist of amorphous or nanocrystalline chromium carbide, hydrogenated amorphous carbon, and minor α-chromium phase. Decreasing the fraction of ethyne increases the content of the α-chromium phase but decreases hydrogenated amorphous carbon phase. The film’s hardness increases by enhancing the negative substrate bias and raising the deposition temperature, which could be attributed to the increase of film density and the Hall–Petch strengthening effect induced by the nanoscale crystallization of the amorphous carbide phase.

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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