Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures

2018 ◽  
Vol 36 (1) ◽  
pp. 01A120 ◽  
Author(s):  
Martha A. Botzakaki ◽  
George Skoulatakis ◽  
Nikolaos Xanthopoulos ◽  
Violetta Gianneta ◽  
Anastasios Travlos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Structural And Electrical Properties ◽  
Mos Structures

Structural and electrical properties of ternary Ru–AlN thin films prepared by plasma-enhanced atomic layer deposition

2012 ◽  
Vol 47 (3) ◽  
pp. 790-793 ◽  
Author(s):  
Yu-Ri Shin ◽  
Won-Sub Kwack ◽  
Yun Chang Park ◽  
Jin-Hyock Kim ◽  
Seung-Yong Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Structural And Electrical Properties

Characteristics of copper films produced via atomic layer deposition

2002 ◽  
Vol 17 (9) ◽  
pp. 2394-2398 ◽  
Author(s):  
Jinshan Huo ◽  
Raj Solanki ◽  
James McAndrew
Keyword(s):  
Water Vapor ◽  
Electrical Properties ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Copper Films ◽  
Layer Deposition ◽  
Subsequent Step ◽  
Seed Layers

Properties of copper films produced using atomic layer deposition (ALD) were characterized. Composition, morphology, and electrical properties of these films grown on glass, as well as Ta, TiN, and TaN on silicon wafers were examined. The resistivity of films thicker than about 60 nm was near bulk value. Films were deposited using a two-step ALD process in which copper(II)-1,1,1,5,5,5,-hexafluoroacetylacetonate hydrate and water vapor were introduced in the first step and a reducing agent was introduced in a subsequent step. Five reducing agents were evaluated, with the best results obtained using isopropanol or formalin. The optimum deposition temperature with isopropanol was about 260 °C, whereas it was about 300 °C with formalin. These films were also investigated as seed layers for electrodeposition of thicker Cu layers for possible interconnect applications. Excellent fills in high aspect ratio trenches were demonstrated.

Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

2018 ◽  
Vol 53 (21) ◽  
pp. 15237-15245 ◽  
Author(s):  
Bo-Eun Park ◽  
Yujin Lee ◽  
Il-Kwon Oh ◽  
Wontae Noh ◽  
Satoko Gatineau ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K ◽  
Structural And Electrical Properties

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

2019 ◽  
Vol 97 ◽  
pp. 35-39 ◽  
Author(s):  
Emanuela Schilirò ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Salvatore Di Franco ◽  
Giuseppe Greco ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Structural And Electrical Properties
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