scholarly journals Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching

2017 ◽  
Vol 35 (6) ◽  
pp. 06G901 ◽  
Author(s):  
Kenan Li ◽  
Michael J. Wojcik ◽  
Ralu Divan ◽  
Leonidas E. Ocola ◽  
Bing Shi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
X Ray ◽  
Zone Plates ◽  
Metal Assisted Chemical Etching

scholarly journals Metal-Assisted Chemical Etching and Electroless Deposition for Fabrication of Hard X-ray Pd/Si Zone Plates

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 301 ◽  
Author(s):  
Rabia Akan ◽  
Thomas Frisk ◽  
Fabian Lundberg ◽  
Hanna Ohlin ◽  
Ulf Johansson ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Chemical Etching ◽  
Electroless Deposition ◽  
Low Cost ◽  
Zone Plate ◽  
X Ray ◽  
Zone Plates ◽  
Aspect Ratios ◽  
Plate Design ◽  
Metal Assisted Chemical Etching

Zone plates are diffractive optics commonly used in X-ray microscopes. Here, we present a wet-chemical approach for fabricating high aspect ratio Pd/Si zone plate optics aimed at the hard X-ray regime. A Si zone plate mold is fabricated via metal-assisted chemical etching (MACE) and further metalized with Pd via electroless deposition (ELD). MACE results in vertical Si zones with high aspect ratios. The observed MACE rate with our zone plate design is 700 nm/min. The ELD metallization yields a Pd density of 10.7 g/cm 3 , a value slightly lower than the theoretical density of 12 g/cm 3 . Fabricated zone plates have a grid design, 1:1 line-to-space-ratio, 30 nm outermost zone width, and an aspect ratio of 30:1. At 9 keV X-ray energy, the zone plate device shows a first order diffraction efficiency of 1.9%, measured at the MAX IV NanoMAX beamline. With this work, the possibility is opened to fabricate X-ray zone plates with low-cost etching and metallization methods.

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

scholarly journals Progress in the fabrication of high-aspect-ratio zone plates by soft x-ray lithography

2002 ◽  
Author(s):  
Ralu Divan ◽  
Derrick C. Mancini ◽  
Nicolai A. Moldovan ◽  
Barry P. Lai ◽  
Lahsen Assoufid ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
X Ray ◽  
Zone Plates

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High
Sign in / Sign up

Export Citation Format

Share Document