Enhancing the dry etch resistance of polymethyl methacrylate patterned with electron beam lithography

2017 ◽  
Vol 35 (4) ◽  
pp. 041602 ◽  
Author(s):  
Daniel J. Carbaugh ◽  
Sneha G. Pandya ◽  
Jason T. Wright ◽  
Savas Kaya ◽  
Faiz Rahman
Keyword(s):  
Electron Beam ◽  
Polymethyl Methacrylate ◽  
Electron Beam Lithography ◽  
Dry Etch

scholarly journals Molecular Embroidering of Graphene

2020 ◽  
Author(s):  
Tao Wei ◽  
Malte Kohring ◽  
Heiko B. Weber ◽  
Frank Hauke ◽  
Andreas Hirsch
Keyword(s):  
Electron Beam ◽  
Polymethyl Methacrylate ◽  
Electron Beam Lithography ◽  
Covalent Binding ◽  
Practical Approach ◽  
Si Substrate ◽  
Spatially Resolved ◽  
Key Factor ◽  
First Time

In the present work, we developed for the first time a practical approach to achieve multiply pattterning of graphene in a way of “molecular graphene embroidery” (as analogy to the well-known fabric embroidery existing in macroscopic world) by manipulating the graphene chemistry to generate regular multiply functionalized patterns consisting of concentric regions of covalent addend binding. Molecular graphene embroidery towards these spatially resolved 2D-hetero-architectures was accomplished by repetitive electron-beam lithography (EBL)/reduction/covalent-binding sequences starting with polymethyl methacrylate (PMMA) covered graphene deposited on a reactive SiO<sub>2</sub>/Si substrate, a key factor for strain-free antaratopic additions.<br>

A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

2017 ◽  
Vol 172 ◽  
pp. 13-18 ◽  
Author(s):  
Xiaqi Huang ◽  
Jinhai Shao ◽  
ChialinTsou ◽  
Sichao Zhang ◽  
Bingrui Lu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
20 Nm ◽  
Dry Etch

scholarly journals Molecular Embroidering of Graphene

2020 ◽  
Author(s):  
Tao Wei ◽  
Malte Kohring ◽  
Heiko B. Weber ◽  
Frank Hauke ◽  
Andreas Hirsch
Keyword(s):  
Electron Beam ◽  
Polymethyl Methacrylate ◽  
Electron Beam Lithography ◽  
Covalent Binding ◽  
Practical Approach ◽  
Si Substrate ◽  
Spatially Resolved ◽  
Key Factor ◽  
First Time

In the present work, we developed for the first time a practical approach to achieve multiply pattterning of graphene in a way of “molecular graphene embroidery” (as analogy to the well-known fabric embroidery existing in macroscopic world) by manipulating the graphene chemistry to generate regular multiply functionalized patterns consisting of concentric regions of covalent addend binding. Molecular graphene embroidery towards these spatially resolved 2D-hetero-architectures was accomplished by repetitive electron-beam lithography (EBL)/reduction/covalent-binding sequences starting with polymethyl methacrylate (PMMA) covered graphene deposited on a reactive SiO<sub>2</sub>/Si substrate, a key factor for strain-free antaratopic additions.<br>

Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist

2017 ◽  
Vol 28 (45) ◽  
pp. 455301 ◽  
Author(s):  
Daniel J Carbaugh ◽  
Sneha G Pandya ◽  
Jason T Wright ◽  
Savas Kaya ◽  
Faiz Rahman
Keyword(s):  
Electron Beam ◽  
Polymethyl Methacrylate ◽  
Electron Beam Lithography

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process
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