Assessment of nitrogen incorporation in dilute GaAsN films using isotopically enriched molecular beam epitaxy and resonant nuclear reaction analysis

2017 ◽  
Vol 35 (2) ◽  
pp. 021209
Author(s):  
John D. Demaree ◽  
Stefan P. Svensson ◽  
Wendy L. Sarney
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nuclear Reaction ◽  
Molecular Beam ◽  
Nuclear Reaction Analysis ◽  
Nitrogen Incorporation

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

2000 ◽  
Vol 77 (16) ◽  
pp. 2482-2484 ◽  
Author(s):  
J. C. Harmand ◽  
G. Ungaro ◽  
L. Largeau ◽  
G. Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

1996 ◽  
Vol 158 (4) ◽  
pp. 399-402 ◽  
Author(s):  
T.S. Cheng ◽  
C.T. Foxon ◽  
L.C. Jenkins ◽  
S.E. Hooper ◽  
J.W. Orton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 506-515 ◽  
Author(s):  
S.G Spruytte ◽  
M.C Larson ◽  
W Wampler ◽  
C.W Coldren ◽  
H.E Petersen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii ◽  
Nitrogen Incorporation ◽  
Group Iii Nitride

Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 3A) ◽  
pp. L361-L364 ◽  
Author(s):  
Yukie Nishikawa ◽  
Masayuki Ishikawa ◽  
Shinji Saito ◽  
Gen-ichi Hatakoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation ◽  
Gaas Substrates

Control of nitrogen incorporation in ZnTe:N grown by molecular‐beam epitaxy using Ar dilution in a N plasma source

1994 ◽  
Vol 76 (9) ◽  
pp. 5214-5217 ◽  
Author(s):  
N. J. Duddles ◽  
K. A. Dhese ◽  
P. Devine ◽  
D. E. Ashenford ◽  
C. G. Scott ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Incorporation

Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

1999 ◽  
Vol 74 (23) ◽  
pp. 3516-3518 ◽  
Author(s):  
C. Jin ◽  
Y. Qiu ◽  
S. A. Nikishin ◽  
H. Temkin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation ◽  
Metalorganic Molecular Beam Epitaxy
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