Control of nitrogen incorporation in ZnTe:N grown by molecular‐beam epitaxy using Ar dilution in a N plasma source

1994 ◽  
Vol 76 (9) ◽  
pp. 5214-5217 ◽  
Author(s):  
N. J. Duddles ◽  
K. A. Dhese ◽  
P. Devine ◽  
D. E. Ashenford ◽  
C. G. Scott ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Incorporation

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

2000 ◽  
Vol 77 (16) ◽  
pp. 2482-2484 ◽  
Author(s):  
J. C. Harmand ◽  
G. Ungaro ◽  
L. Largeau ◽  
G. Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

p‐type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

1994 ◽  
Vol 65 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Junji Kawamata ◽  
Ziqiang Zhu ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
P Type

The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

1996 ◽  
Vol 449 ◽  
Author(s):  
S. L. Buczkowski ◽  
Zhonghai Yu ◽  
M. Richards-Babb ◽  
N. C. Giles ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nucleation And Growth ◽  
Rf Plasma ◽  
Molecular Beam Epitaxy Growth ◽  
Dramatic Effect ◽  
Inversion Domain

ABSTRACTNucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy

1995 ◽  
pp. 329-334 ◽  
Author(s):  
G. W. Auner ◽  
T. D. Lenane ◽  
F. Ahmad ◽  
R. Naik ◽  
P. K. Kuo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Plasma Source

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

1996 ◽  
Vol 158 (4) ◽  
pp. 399-402 ◽  
Author(s):  
T.S. Cheng ◽  
C.T. Foxon ◽  
L.C. Jenkins ◽  
S.E. Hooper ◽  
J.W. Orton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
M. Touzeau ◽  
A. Schuhl ◽  
R. Cabanel ◽  
P. Luzeau ◽  
A. Barski ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
High Temperature Superconductors ◽  
Plasma Source ◽  
Plasma Discharge

AbstractWe describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

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