High resolution TEM analysis of focused ion beam amorphized regions in single crystal silicon—A complementary materials analysis of the teardrop method

2017 ◽  
Vol 35 (1) ◽  
pp. 011801 ◽  
Author(s):  
Yariv Drezner ◽  
Yuval Greenzweig ◽  
Shida Tan ◽  
Richard H. Livengood ◽  
Amir Raveh
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Tem Analysis ◽  
Materials Analysis ◽  
High Resolution Tem

Influence of Specimen Size and Sub-Micron Notch on The Fracture Behavior of Single Crystal Silicon Microelements and Nanoscopic Afm Damage Evaluation

1998 ◽  
Vol 546 ◽  
Author(s):  
Kohji Minoshima ◽  
Shigemichi Inoue ◽  
Tomota Terada ◽  
Kenjiro Komai
Keyword(s):  
Single Crystal ◽  
Fracture Strength ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Fatigue Loading ◽  
Sample Surface ◽  
Specimen Size ◽  
Fracture Mechanisms ◽  
Crystal Silicon

AbstractSimple bending tests of single-crystal silicon microelements fabricated by photoetching were performed. Silicon microelements deform elastically until final catastrophic failure, showing a brittle nature. The fracture strength increases with a decrease in specimen size, and the maximum strength reaches about 8 GPa. A Focused ion beam was used to machine a sub-µm deep notch. Such a small notch decreases the fracture strength of a microelement. Some fatigue tests were conducted in laboratory air and in distilled water: water reduces the strength of microelement under fatigue loading. Fracture surface and sample surface were closely examined with a scanning electron microscope and an atomic force microscope, and the fracture mechanisms are discussed from the nanoscopic points of view.

A High Resolution TEM Specimen Thinning System

1991 ◽  
Vol 254 ◽  
Author(s):  
R. Clampitt ◽  
G. G. Ross ◽  
M. Phelan ◽  
S. A. Davies
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Commercial System ◽  
High Resolution Tem

AbstractImprovements in specimen preparation for TEM analysis are being constantly sought, particularly in the study of microelectronics' materials and in failure analysis of devices. We describe here a compact commercial system capable of thinning (milling) selected regions of a specimen by means of a scanned focused ion beam of sub-micron spatial resolution.

Process Optimization for Cylindrical Single-Crystal Silicon Mirror with a Tilted Incident Ion Beam Figuring

2020 ◽  
Vol 40 (12) ◽  
pp. 1222001
Author(s):  
宋辞 Song Ci ◽  
田野 Tian Ye ◽  
石峰 Shi Feng ◽  
张坤 Zhang Kun ◽  
沈永祥 Shen Yongxiang
Keyword(s):  
Single Crystal ◽  
Process Optimization ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Ion Beam Figuring

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Surface damages on single-crystal silicon during irradiation by a powerful ion beam

2012 ◽  
Vol 6 (2) ◽  
pp. 244-247 ◽  
Author(s):  
V. S. Kovivchak ◽  
T. V. Panova ◽  
O. V. Krivozubov ◽  
N. A. Davletkil’deev ◽  
E. V. Knyazev
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Surface Damages

Fracture Toughness Measurement of a Micro-Sized Single Crystal Silicon

2005 ◽  
Vol 297-300 ◽  
pp. 292-298 ◽  
Author(s):  
Satoru Koyama ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Ion Beam ◽  
Testing Machine ◽  
Single Crystal Silicon ◽  
Mems Devices ◽  
Type Specimens ◽  
Crystal Silicon ◽  
Fracture Toughness Measurement ◽  
Toughness Measurement

Reliability is one of the most critical issues for designing practical MEMS devices. In particular, the fracture toughness of micro-sized MEMS elements is important, as micro/nano-sized flaws can act as a crack initiation sites to cause failure of such devices. Existing MEMS devices commonly use single crystal silicon. Fracture toughness testing upon micro-sized single crystal silicon was therefore carried out to examine whether a fracture toughness measurement technique, based upon the ASTM standard, is applicable to 1/1000th sized silicon specimens. Notched cantilever beam type specimens were prepared by focused ion beam machining. Two specimens types with different notch orientations were prepared. The notch plane/direction were (100)/[010], and (110)/[ ＿ ,110], respectively. Fracture toughness tests were carried out using a mechanical testing machine for micro-sized specimens. Fracture has been seen to occur in a brittle manner in both orientations. The provisional fracture toughness values (KQ) are 1.05MPam1/2 and 0.96MPam1/2, respectively. These values meet the micro-yielding criteria for plane strain fracture toughness values (KIC). Fracture toughness values for the orientations tested are of the same order as values in the literature. The results obtained in this investigation indicate that the fracture toughness measurement method used is applicable for micro-sized components of single crystal silicon in MEMS devices.

Surface Modification Energized by FIB: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths

2006 ◽  
Vol 960 ◽  
Author(s):  
Warren MoberlyChan
Keyword(s):  
Aspect Ratio ◽  
Self Assembly ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Natural Diamond ◽  
Single Crystal Silicon ◽  
Nanometer Scale ◽  
Crystal Silicon ◽  
Etch Rates

ABSTRACTIon beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond (∼200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity. Also ripples <0.4nm are fabricated on carbon-base surfaces, and these quantized picostructures are measured by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material has a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the boundary conditions of FIB processing.

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