Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition

2017 ◽  
Vol 35 (1) ◽  
pp. 01B119 ◽  
Author(s):  
Matthias C. Schwille ◽  
Timo Schössler ◽  
Florian Schön ◽  
Martin Oettel ◽  
Johann W. Bartha
Keyword(s):  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Sticking Coefficients

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

2014 ◽  
Vol 211 (9) ◽  
pp. 2166-2171 ◽  
Author(s):  
Woochool Jang ◽  
Heeyoung Jeon ◽  
Chunho Kang ◽  
Hyoseok Song ◽  
Jingyu Park ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

2003 ◽  
Vol 765 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Rate ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Probe Measurements

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Temperature dependence of SiO2 film growth with plasma-enhanced atomic layer deposition

2012 ◽  
Vol 520 (11) ◽  
pp. 3994-3998 ◽  
Author(s):  
Akiko Kobayashi ◽  
Naoto Tsuji ◽  
Atsuki Fukazawa ◽  
Nobuyoshi Kobayashi
Keyword(s):  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Film Growth ◽  
Atomic Layer ◽  
Sio2 Film ◽  
Layer Deposition

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

2020 ◽  
Vol 536 ◽  
pp. 125568 ◽  
Author(s):  
Justin C. Goodrich ◽  
Thomas G. Farinha ◽  
Ling Ju ◽  
Alexandra J. Howzen ◽  
Animesh Kundu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Surface Pretreatment ◽  
Layer Deposition
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