scholarly journals Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

2021 ◽  
Vol 39 (3) ◽  
pp. 032412
Author(s):  
Martijn F. J. Vos ◽  
Sonali N. Chopra ◽  
John G. Ekerdt ◽  
Sumit Agarwal ◽  
Wilhelmus M. M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Selective Etching ◽  
Selective Deposition ◽  
Layer Deposition

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

2020 ◽  
Vol 536 ◽  
pp. 125568 ◽  
Author(s):  
Justin C. Goodrich ◽  
Thomas G. Farinha ◽  
Ling Ju ◽  
Alexandra J. Howzen ◽  
Animesh Kundu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Surface Pretreatment ◽  
Layer Deposition

scholarly journals Area-Selective Deposition of Ruthenium by Combining Atomic Layer Deposition and Selective Etching

2019 ◽  
Vol 31 (11) ◽  
pp. 3878-3882 ◽  
Author(s):  
Martijn F. J. Vos ◽  
Sonali N. Chopra ◽  
Marcel A. Verheijen ◽  
John G. Ekerdt ◽  
Sumit Agarwal ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Selective Etching ◽  
Selective Deposition ◽  
Layer Deposition

Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition

2012 ◽  
Vol 210 (2) ◽  
pp. 276-284 ◽  
Author(s):  
Jaesang Lee ◽  
Seung Jae Lee ◽  
Won Bae Han ◽  
Heeyoung Jeon ◽  
Jingyu Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Titanium Oxide ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Remote Plasma ◽  
Layer Deposition

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

2021 ◽  
Author(s):  
Seunghwan Lee ◽  
GeonHo Baek ◽  
Hye-mi Kim ◽  
Yong-Hwan Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Atomic Layer Deposition ◽  
Electron Beam Irradiation ◽  
Molecular Layer ◽  
Atomic Layer ◽  
Beam Irradiation ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Amorphous Structures

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

2021 ◽  
Vol 39 (3) ◽  
pp. 032416
Author(s):  
Taguhi Yeghoyan ◽  
Vincent Pesce ◽  
Moustapha Jaffal ◽  
Gauthier Lefevre ◽  
Rémy Gassilloud ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Selective Deposition ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

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