In situ metrology to characterize water vapor delivery during atomic layer deposition

2016 ◽  
Vol 34 (3) ◽  
pp. 031512 ◽  
Author(s):  
Tariq Ahmido ◽  
William A. Kimes ◽  
Brent A. Sperling ◽  
Joseph T. Hodges ◽  
James E. Maslar
Keyword(s):  
Water Vapor ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
In Situ Metrology

Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

2011 ◽  
Vol 98 (10) ◽  
pp. 102905 ◽  
Author(s):  
In-Sung Park ◽  
Youngjae Choi ◽  
William T. Nichols ◽  
Jinho Ahn
Keyword(s):  
Water Vapor ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Vapor Treatment

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

scholarly journals In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 14567-14574 ◽  
Author(s):  
Mantu K. Hudait ◽  
Michael B. Clavel ◽  
Jheng-Sin Liu ◽  
Shuvodip Bhattacharya
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition
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