Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation
2016 ◽
Vol 34
(3)
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pp. 031103
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2015 ◽
Vol 353
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pp. 1203-1207
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Keyword(s):
1998 ◽
Vol 37
(Part 1, No. 7A)
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pp. 4197-4203
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Keyword(s):
2001 ◽
Vol 11
(4)
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pp. 348-352
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1996 ◽
Vol 143
(7)
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pp. 2365-2371
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2002 ◽
Vol 31
(2)
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pp. 113-118
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