scholarly journals Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation

2015 ◽  
Vol 353 ◽  
pp. 1203-1207 ◽  
Author(s):  
F. Predan ◽  
D. Reinwand ◽  
V. Klinger ◽  
F. Dimroth
Keyword(s):  
Wafer Bonding ◽  
Low Temperatures ◽  
Surface Activation ◽  
Electrically Conductive ◽  
Direct Wafer Bonding ◽  
Beam Surface

scholarly journals Effects of surface activation time on Si-Si direct wafer bonding at room temperature

2021 ◽  
Author(s):  
Song Yang ◽  
Yongfeng Qu ◽  
Ningkang Deng ◽  
Kang Wang ◽  
Shi He ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Surface Activation ◽  
Activation Time ◽  
Direct Wafer Bonding

Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 4197-4203 ◽  
Author(s):  
Hideki Takagi ◽  
Ryutaro Maeda ◽  
Teak Ryong Chung ◽  
Naoe Hosoda ◽  
Tadatomo Suga
Keyword(s):  
Surface Roughness ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Surface Activation ◽  
Beam Surface ◽  
Effect Of Surface

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Point defects generated by direct-wafer bonding of silicon

2002 ◽  
Vol 31 (2) ◽  
pp. 113-118 ◽  
Author(s):  
L. Dózsa ◽  
B. Szentpáli ◽  
D. Pasquariello ◽  
K. Hjort
Keyword(s):  
Point Defects ◽  
Wafer Bonding ◽  
Direct Wafer Bonding
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