Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma

2016 ◽  
Vol 34 (3) ◽  
pp. 031301
Author(s):  
Akio Ui ◽  
Hisataka Hayashi ◽  
Itsuko Sakai ◽  
Takeshi Kaminatsui ◽  
Tokuhisa Ohiwa ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Energy Control ◽  
Ion Etching ◽  
Ion Energy ◽  
Capacitively Coupled ◽  
Square Wave ◽  
Pulsed Dc ◽  
Capacitively Coupled Plasma

Angled etching of (001) rutile Nb–TiO2substrate using SF6-based capacitively coupled plasma reactive ion etching

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JF02 ◽  
Author(s):  
Akihiro Matsutani ◽  
Kunio Nishioka ◽  
Mina Sato ◽  
Dai Shoji ◽  
Daito Kobayashi ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Capacitively Coupled ◽  
Capacitively Coupled Plasma

Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride

2003 ◽  
Vol 764 ◽  
Author(s):  
Suk Ing Liem ◽  
Roger J. Reeves
Keyword(s):  
Gallium Nitride ◽  
Radiative Recombination ◽  
Reactive Ion Etching ◽  
Semiconductor Materials ◽  
Sulphur Hexafluoride ◽  
Electron Hole ◽  
Ion Etching ◽  
Radiative Lifetimes ◽  
Ion Energy ◽  
Optical Damage

AbstractReactive Ion Etching (RIE) induces defects in semiconductor materials. These defects can serve as local non-radiative recombination centres for electron-hole pairs, affecting the radiative lifetimes and luminescence efficiencies of the semiconductors. Argon (Ar) and sulphur hexafluoride (SF6) gases were used as etching gases to investigate the influence of ion energy on the RIE induced optical damage of Gallium Nitride (GaN). The significant result of etching by Ar and SF6 gases was that these etching induce defects, but as the total PL does not greatly change, it appears that this process is not increasing the density of nonradiative centres.

A Derivation of Ion Energy Distribution Function for Dual Frequencies Capacitively Coupled Plasma

2014 ◽  
Vol 513-517 ◽  
pp. 4253-4256
Author(s):  
Zhu Wen Zhou ◽  
De Liang Chen ◽  
Bo Kong ◽  
Yuan Sheng Wang
Keyword(s):  
Energy Distribution ◽  
Integrated Circuit ◽  
Theory Model ◽  
Low Frequencies ◽  
Ion Energy ◽  
Capacitively Coupled ◽  
Ion Energy Distribution ◽  
Particle In Cell ◽  
Capacitively Coupled Plasma ◽  
Ion Energy Distributions

A model of ion energy distribution of dual frequencies capacitively coupled plasma (CCP) has been investigated, it is important to analyze these phenomenon and mechanism in order to control the microelectronic processes of integrated circuit and develop the base theories of plasma physics. We focused on the function of the ion energy distributions under high and low frequencies (dual frequencies) drive in capacitive discharges, we derived a theory model of the dual frequencies driven IEDs from analyzing theories. The model can analyze and predict the IEDs under different high and low frequencies driven, which results in accurate multi-peaks IEDs and energy width for the given control parameters, particle-in-cell (PIC) simulations are used to verify this model.

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