scholarly journals Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate

2015 ◽  
Vol 33 (6) ◽  
pp. 061403 ◽  
Author(s):  
Takaaki Iwai ◽  
Koji Eriguchi ◽  
Shohei Yamauchi ◽  
Naotaka Noro ◽  
Junichi Kitagawa ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Defect Structures ◽  
Si Substrate ◽  
Microwave Annealing

Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

2004 ◽  
Vol 84 (23) ◽  
pp. 4717-4719 ◽  
Author(s):  
T. Hikosaka ◽  
T. Narita ◽  
Y. Honda ◽  
M. Yamaguchi ◽  
N. Sawaki
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Si Substrate

Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate

2011 ◽  
Vol 47 (7) ◽  
pp. 899-906 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Chien-Chung Lin ◽  
Dong-Mei Deng ◽  
Da-Wei Lin ◽  
Jin-Chai Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diodes ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Light Emitting ◽  
Nano Scale

scholarly journals Enhanced Optical and Electrical Properties of ITO/Ag/AZO Transparent Conductors for Photoelectric Applications

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Gyeong-Nam Lee ◽  
Ponnamma Machaiah M. ◽  
Wang-Hee Park ◽  
Joondong Kim
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Transparent Conductors ◽  
Optical And Electrical Properties ◽  
Rectification Ratio ◽  
Si Substrate ◽  
Electrical And Optical Properties

The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Ω/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.

Optical and electrical properties of hydrothermally grown Al-doped ZnO nanorods on graphene/Ni/Si substrate

2013 ◽  
Vol 82 ◽  
pp. 99-102 ◽  
Author(s):  
L.L. Wang ◽  
B.Z. Lin ◽  
M.P. Hung ◽  
L. Zhou ◽  
G.N. Panin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanorods ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Doped Zno

Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications

2020 ◽  
Vol 34 (08) ◽  
pp. 2050068
Author(s):  
Mai Thi Kieu Lien ◽  
Noritaka Usami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Modification ◽  
Solar Cell ◽  
Electrical Properties ◽  
Crystalline Quality ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Thermal Evaporation Method ◽  
Substrate Modification

We have grown orthorhombic barium disilicide ([Formula: see text]) thin-films on modified silicon (Si) substrates by a thermal evaporation method. The surface modification of Si substrate was performed by a metal-assisted chemical etching method. The effects of etching time [Formula: see text] on crystalline quality as well as optical and electrical properties of the [Formula: see text] films were investigated. The obtained results showed that substrate modification can enhance the crystalline quality and electrical properties; reduce the light reflection; and increase the absorption of the [Formula: see text] thin-films. The [Formula: see text] of 8 s was chosen as the optimized condition for surface modification of Si substrate. The achieved inferred short-circuit current density, Hall mobility, and minority carrier lifetime of the [Formula: see text] film at [Formula: see text] of 8 s were [Formula: see text], [Formula: see text], and [Formula: see text]s, respectively. These results confirm that the [Formula: see text] thin-film evaporated on the modified Si substrate is a promising absorber for thin-film solar cell applications.

Optical and Electrical Properties of Organic Conducting Polymers

2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon
Keyword(s):  
Electrical Properties ◽  
Conjugated Polymer ◽  
Polymeric Materials ◽  
Quantum Mechanical ◽  
Optical And Electrical Properties ◽  
Electrically Conducting ◽  
Temperature Ranges ◽  
Lithium Tetrafluoroborate ◽  
Absorbance Peak ◽  
Polymerization Method

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.

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