scholarly journals Enhanced Optical and Electrical Properties of ITO/Ag/AZO Transparent Conductors for Photoelectric Applications

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Gyeong-Nam Lee ◽  
Ponnamma Machaiah M. ◽  
Wang-Hee Park ◽  
Joondong Kim
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Transparent Conductors ◽  
Optical And Electrical Properties ◽  
Rectification Ratio ◽  
Si Substrate ◽  
Electrical And Optical Properties

The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Ω/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.

Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Middle Layer ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Composite Electrodes ◽  
Transparent Composite

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

Preparation and Study the Electrical and Optical Properties for (PVA-PEG-Sr2O3) Nanocomposites

2021 ◽  
Vol 19 (10) ◽  
pp. 47-55
Author(s):  
Safa Ahmed Jabbar Al-Rubaye ◽  
Nassar A. Al-lsawi ◽  
Ali R. Abdulridha
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Energy Gap ◽  
Antimony Oxide ◽  
Optical And Electrical Properties ◽  
Electrical And Optical Properties ◽  
Constant E

In the presented work, the optical and electrical properties of composite materials (PVA-PEG-Sr2O3) were measured, as the electrical properties were verified at various frequencies in range of 100 Hz-6 MHz. In addition, the experimental results showed that the increase in frequency causes a reduction in the dielectric loss (δ) and dielectric constant (ɛ), and there is an increase in ɛ due to the increase in the content of antimony oxide (Sr2O3). It increases with increasing frequency and decreases with increasing Sr2O3 content in PVA-PEG-Sr2O3 compounds, the result of the optical properties of the nanoparticles (PVA-PEG-Sr2O3) showed that the values transmittance and energy gap were reduced with the increases in the concentrations of Sr2O3 NPs, whereas the values related to extinction coefficient, absorption coefficient, optical conductivity, refractive index, and dielectric constant (imaginary, real) were increased with increase in the concentration of Sr2O3 NPs.

Electrical and Optical Properties of Indium Tin Zirconium Oxide Films at Different Annealing Treatment Temperatures

2012 ◽  
Vol 189 ◽  
pp. 110-114
Author(s):  
Jian Guo Chai ◽  
Bo Zhang
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Lower Annealing Temperature

Indium tin oxide (ITO) and indium tin zirconium oxide (ITZO) films were deposited on glass substrates at room temperature by magnetron sputtering technology with one or two targets. Electrical and optical properties of ITO and ITZO films by air-annealing treatment were contrastively studied. ITZO films provided with the preferential crystalline orientation change from (222) to (400) plane, as well as the increase in grain size and the decrease in surface roughness. As result, zirconium -doping remarkably improved the optical-electrical properties of the films deposited at room temperature. The resistivity of ITO and ITZO films showed the trend which includes first dropping and then rising, which was closely related with the variations of carrier concentration and mobility. ITZO films had high optical transmittance of above 80% at lower annealing temperature. ITZO films prepared by co-sputtering reveal better optical-electrical properties.

Effect of Substrate Temperature on Properties of CuInSe2 Thin Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 287-290 ◽  
pp. 2131-2135
Author(s):  
Zhi Yan ◽  
Xin Ji ◽  
Ming Li ◽  
Yi Ming Mi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Sputtering ◽  
Preferential Orientation ◽  
Electrical And Optical Properties

CuInSe2thin films were successfully deposited by magnetron RF-sputtering at different substrates temperature (100°C, 200°C, 300°C, 400°C, and 500°C). Effect of substrate temperature on these films crystallization, morphologies, and electrical properties were investigated. Results showed that increase of substrate temperature is in favor to be constituted in a chalcopyrite phase with a preferential orientation of (112), (211) and (312). The morphology images implied the film deposited at 200 oC had smoother surface than others. Furthermore, it was indicated that substrates temperature of 200°C had the best electrical and optical properties among these samples.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

Sign in / Sign up

Export Citation Format

Share Document