Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN

Author(s):  
Annett Winzer ◽  
Nadine Szabó ◽  
Andre Wachowiak ◽  
Paul Matthias Jordan ◽  
Johannes Heitmann ◽  
...  
2018 ◽  
Vol 36 (2) ◽  
pp. 021515 ◽  
Author(s):  
Shinya Iwashita ◽  
Tsuyoshi Moriya ◽  
Takamichi Kikuchi ◽  
Munehito Kagaya ◽  
Naotaka Noro ◽  
...  

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035333 ◽  
Author(s):  
Heungseop Song ◽  
Donghyuk Shin ◽  
Ji-eun Jeong ◽  
Heungsoo Park ◽  
Dae-Hong Ko

2011 ◽  
Vol 158 (8) ◽  
pp. G169 ◽  
Author(s):  
Woo-Hee Kim ◽  
Min-Kyu Kim ◽  
W. J. Maeng ◽  
Julien Gatineau ◽  
Venkat Pallem ◽  
...  

2014 ◽  
Vol 43 (9) ◽  
pp. 3492-3500 ◽  
Author(s):  
K. B. Klepper ◽  
O. Nilsen ◽  
S. Francis ◽  
H. Fjellvåg

We investigated the influence of the functionality of organic ligands on film properties in organic–inorganic hybrid thin films deposited by atomic layer deposition.


2015 ◽  
Vol 3 (21) ◽  
pp. 11453-11461 ◽  
Author(s):  
V. Rogé ◽  
N. Bahlawane ◽  
G. Lamblin ◽  
I. Fechete ◽  
F. Garin ◽  
...  

In this work, we have evidenced the impact of stoichiometry on the photocatalytic properties of ZnO nanofilms grown by atomic layer deposition (ALD).


2020 ◽  
Vol 38 (2) ◽  
pp. 022405 ◽  
Author(s):  
Saidjafarzoda Ilhom ◽  
Deepa Shukla ◽  
Adnan Mohammad ◽  
John Grasso ◽  
Brian Willis ◽  
...  

Nanomaterials ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 172
Author(s):  
Kai Zhao ◽  
Jingye Xie ◽  
Yudi Zhao ◽  
Dedong Han ◽  
Yi Wang ◽  
...  

Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.


2021 ◽  
Vol 403 ◽  
pp. 126234
Author(s):  
Viet Huong Nguyen ◽  
Abderrahime Sekkat ◽  
Carmen Jiménez ◽  
Delfina Muñoz ◽  
Daniel Bellet ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document