scholarly journals Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035333 ◽  
Author(s):  
Heungseop Song ◽  
Donghyuk Shin ◽  
Ji-eun Jeong ◽  
Heungsoo Park ◽  
Dae-Hong Ko
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Film Properties ◽  
Feeding Method ◽  
Layer Deposition

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide

2014 ◽  
Vol 26 (2) ◽  
pp. 024003 ◽  
Author(s):  
Stephan Ratzsch ◽  
Ernst-Bernhard Kley ◽  
Andreas Tünnermann ◽  
Adriana Szeghalmi
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Plasma Parameters ◽  
Layer Deposition

scholarly journals Novel Antimicrobial Titanium Dioxide Nanotubes Obtained through a Combination of Atomic Layer Deposition and Electrospinning Technologies

Nanomaterials ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 128 ◽  
Author(s):  
Carol López de Dicastillo ◽  
Cristian Patiño ◽  
María Galotto ◽  
Juan Palma ◽  
Daniela Alburquenque ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Dioxide Nanotubes ◽  
Layer Deposition

scholarly journals Dispersion Characteristics of α-Fe2O3 Nanopowders Coated with Titanium Dioxide by Atomic Layer Deposition

2017 ◽  
Vol 54 (2) ◽  
pp. 137-140 ◽  
Author(s):  
Hae Ryul Ok ◽  
Bo Kyung Lee ◽  
Hye Jin Bae ◽  
Hyug Jong Kim ◽  
Byung Ho Choi
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dispersion Characteristics ◽  
Layer Deposition

Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition

2018 ◽  
Vol 36 (2) ◽  
pp. 021515 ◽  
Author(s):  
Shinya Iwashita ◽  
Tsuyoshi Moriya ◽  
Takamichi Kikuchi ◽  
Munehito Kagaya ◽  
Naotaka Noro ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Properties ◽  
Layer Deposition ◽  
Ion Energies ◽  
Titanium Dioxides

scholarly journals In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

2019 ◽  
Vol 21 (3) ◽  
pp. 1393-1398 ◽  
Author(s):  
Robert H. Temperton ◽  
Andrew Gibson ◽  
James N. O'Shea
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Growth Process ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Xps Analysis ◽  
Layer Deposition ◽  
Titanium Dioxide Surface ◽  
Rutile Titanium Dioxide

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. XPS measurements were made during the growth process at near-ambient pressures.

Sign in / Sign up

Export Citation Format

Share Document