Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

2015 ◽  
Vol 33 (1) ◽  
pp. 01A136 ◽  
Author(s):  
Yan-Qiang Cao ◽  
Xin Li ◽  
Lin Zhu ◽  
Zheng-Yi Cao ◽  
Di Wu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
High K ◽  
High K Gate Dielectric

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

2010 ◽  
Vol 96 (14) ◽  
pp. 142112 ◽  
Author(s):  
Dong Chan Suh ◽  
Young Dae Cho ◽  
Sun Wook Kim ◽  
Dae-Hong Ko ◽  
Yongshik Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric

scholarly journals Fabrication and Characterization of amorphous Lanthanum Zirconate Gate Capacitors

2019 ◽  
Vol 8 (11) ◽  
pp. 2868-2872
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Gate Dielectric ◽  
Semiconductor Device ◽  
Oxide Semiconductor ◽  
Future Application ◽  
High K ◽  
La Doped ◽  
High K Gate Dielectric

A novel high-k gate dielectric material, i.e., Lanthanum-doped Zirconium oxide (La-doped ZrO2 ), has been thoroughly studied for applications in future metal oxide semiconductor field-effect transistor (MOSFET). The film's structural, chemical and electrical properties are investigated experimentally. The incorporation of La into ZrO2 impacted the electrical properties in terms of leakage current while not sacrificing its dielectric constant. The dielectric constant of 25 is achieved which is calculated from the C-V analysis taken from Agilent 1500A Semiconductor Device Analyzer. XRD, FTIR, EDX analysis were conducted to confirm the stoichiometry and bond formation of La2Zr2O7 . The sol-gel spin coating method is adopted to form a uniform thin film over p-Silicon substrate and Aluminium is evaporated in the eBeam technique as gate electrode to form an MIS capacitor. The La-doped ZrO2 film is hence a potential high-k gate dielectric for future application in MIS thin film transistors.

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