Minimization of line edge roughness and critical dimension error in electron-beam lithography

2014 ◽  
Vol 32 (6) ◽  
pp. 06F505 ◽  
Author(s):  
Xinyu Zhao ◽  
Soo-Young Lee ◽  
Jin Choi ◽  
Sang-Hee Lee ◽  
In-Kyun Shin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Critical Dimension ◽  
Line Edge Roughness ◽  
Edge Roughness

Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography

2004 ◽  
Vol 43 (6B) ◽  
pp. 3739-3743 ◽  
Author(s):  
Masaki Yoshizawa ◽  
Shigeru Moriya ◽  
Hiroyuki Nakano ◽  
Yuichi Shirai ◽  
Tatsuo Morita ◽  
...  
Keyword(s):  
Electron Beam ◽  
Image Quality ◽  
Electron Beam Lithography ◽  
Line Edge Roughness ◽  
Latent Image ◽  
Edge Roughness ◽  
On Line

Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography

2008 ◽  
Vol 104 (2) ◽  
pp. 024303 ◽  
Author(s):  
Akinori Saeki ◽  
Takahiro Kozawa ◽  
Seiichi Tagawa ◽  
Heidi B. Cao ◽  
Hai Deng ◽  
...  
Keyword(s):  
Electron Beam ◽  
Concentration Dependence ◽  
Electron Beam Lithography ◽  
Line Edge Roughness ◽  
Amine Concentration ◽  
Edge Roughness ◽  
On Line

Motif Parameters Based Characterization of Line Edge Roughness of a Nanoscale Grating Structure

2010 ◽  
Vol 437 ◽  
pp. 45-50
Author(s):  
Zhuang De Jiang ◽  
Feng Xia Zhao ◽  
Wei Xuan Jing ◽  
Philip D. Prewett ◽  
Kyle Jiang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Evaluation Method ◽  
Line Edge Roughness ◽  
Grating Structure ◽  
Nano Scale ◽  
Edge Roughness ◽  
Positive Resist

Motif parameters were introduced to characterize line edge roughness (LER) of a nanoscale grating structure. Firstly with electron beam lithography employed the expected nano-scale grating structure with linewidth of 16 nm was fabricated on positive resist. Then the line edge profiles of the structure were extracted and their LERs were characterized. The results showed that the evaluation method is rather simple, effective and recommendable.

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