scholarly journals Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

2014 ◽  
Vol 32 (4) ◽  
pp. 040601 ◽  
Author(s):  
Xin-Hao Zhao ◽  
Michael J. DiNezza ◽  
Shi Liu ◽  
Su Lin ◽  
Yuan Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Double Heterostructures

Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L930-L933 ◽  
Author(s):  
Takashi Suemasu ◽  
Motoki Takauji ◽  
Cheng Li ◽  
Yoshinori Ozawa ◽  
Masao Ichida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of the defect lines in GaAs molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 838-841
Author(s):  
S. Charbonneau ◽  
M. L. W. Thewalt ◽  
T. Steiner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Region ◽  
Molecular Beam ◽  
Resonant Excitation ◽  
High Quality ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Recombination Processes ◽  
Time Resolved Photoluminescence ◽  
Exciton Transitions

A time-resolved photoluminescence study of the defect-induced bound excitons (DIBE) observed in the energy region 1504–1511 meV in high quality molecular-beam epitaxy grown GaAs has been performed. Our results support the model that these lines consist of two distinct recombination processes. Transient resonant excitation of these DIBE demonstrate that the lines i to s can be associated with acceptor – bound exciton transitions.

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

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