Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4871472 ◽

2014 ◽

Vol 32 (3) ◽

pp. 031514 ◽

Cited By ~ 6

Author(s):

Chih-Jui Ni ◽

Franklin Chau-Nan Hong

Keyword(s):

Gallium Nitride ◽

Low Temperature ◽

Magnetron Sputtering ◽

Inductively Coupled Plasma ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Temperature Growth ◽

Low Temperature Growth ◽

Inductively Coupled

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Plasma-Enhanced Reactive Magnetron Sputtering Assisted with Inductively Coupled Plasma for Reactivity-Controlled Deposition of Microcrystalline Silicon Thin Films

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.11nb05 ◽

2013 ◽

Vol 52 (11S) ◽

pp. 11NB05 ◽

Cited By ~ 4

Author(s):

Kosuke Takenaka ◽

Yuichi Setsuhara ◽

Akinori Ebe

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Inductively Coupled Plasma ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Microcrystalline Silicon ◽

Inductively Coupled ◽

Silicon Thin Films ◽

Controlled Deposition

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Low temperature growth of vertically aligned carbon nanofibres in a low frequency inductively coupled plasma reactor

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ◽

10.1109/commad.2002.1237221 ◽

2005 ◽

Cited By ~ 1

Author(s):

S. Xu ◽

Z. Tskadze ◽

J.D. Long ◽

K. Ostrikov ◽

N. Jiang

Keyword(s):

Low Temperature ◽

Inductively Coupled Plasma ◽

Plasma Reactor ◽

Low Frequency ◽

Carbon Nanofibres ◽

Temperature Growth ◽

Low Temperature Growth ◽

Inductively Coupled ◽

Inductively Coupled Plasma Reactor ◽

Vertically Aligned

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Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3714 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3714-3720 ◽

Cited By ~ 61

Author(s):

Masashi Goto ◽

Hirotaka Toyoda ◽

Masatoshi Kitagawa ◽

Takashi Hirao ◽

Hideo Sugai

Keyword(s):

Low Temperature ◽

Inductively Coupled Plasma ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Temperature Growth ◽

Low Temperature Growth ◽

Inductively Coupled ◽

Polycrystalline Silicon Films

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Metallic sputtering growth of high quality anatase phase TiO2 films by inductively coupled plasma assisted DC reactive magnetron sputtering

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2009.06.001 ◽

2009 ◽

Vol 203 (23) ◽

pp. 3661-3668 ◽

Cited By ~ 10

Author(s):

Z.G. Li ◽

Y.X. Wu ◽

S. Miyake

Keyword(s):

Magnetron Sputtering ◽

Inductively Coupled Plasma ◽

Anatase Phase ◽

Reactive Magnetron Sputtering ◽

Tio2 Films ◽

Reactive Magnetron ◽

High Quality ◽

Inductively Coupled ◽

Dc Reactive Magnetron Sputtering

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Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

Applied Surface Science ◽

10.1016/j.apsusc.2009.06.126 ◽

2009 ◽

Vol 255 (22) ◽

pp. 9149-9153 ◽

Cited By ~ 23

Author(s):

Z.G. Li ◽

S. Miyake

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Glass Substrate ◽

Inductively Coupled Plasma ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Tio2 Thin Films ◽

Doped Tio2 ◽

Inductively Coupled ◽

Dc Reactive Magnetron Sputtering

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Low temperature growth of graphene using inductively-coupled plasma chemical vapor deposition

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2016.10.081 ◽

2017 ◽

Vol 309 ◽

pp. 814-819 ◽

Cited By ~ 12

Author(s):

Sami Pekdemir ◽

M. Serdar Onses ◽

Mehmet Hancer

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Temperature Growth ◽

Low Temperature Growth ◽

Plasma Chemical Vapor Deposition ◽

Inductively Coupled

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Low-Temperature Growth of N-doped SiO2Layer Using Inductively-Coupled Plasma Oxidation and Its Effect on the Characteristics of Thin Film Transistors

Korean Journal of Materials Research ◽

10.3740/mrsk.2009.19.1.037 ◽

2009 ◽

Vol 19 (1) ◽

pp. 37-43 ◽

Cited By ~ 1

Author(s):

Bo-Hyun Kim ◽

Seung-Ryul Lee ◽

Kyung-Min Ahn ◽

Seung-Mo Kang ◽

Yong-Ho Yang ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Inductively Coupled Plasma ◽

Plasma Oxidation ◽

Temperature Growth ◽

Low Temperature Growth ◽

Inductively Coupled

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Improved performance of thermochromic VO2/SiO2 coatings prepared by low-temperature pulsed reactive magnetron sputtering: Prediction and experimental verification

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.07.093 ◽

2018 ◽

Vol 767 ◽

pp. 46-51 ◽

Cited By ~ 13

Author(s):

D. Kolenaty ◽

J. Houska ◽

J. Vlcek

Keyword(s):

Low Temperature ◽

Magnetron Sputtering ◽

Experimental Verification ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Improved Performance

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LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OF SiCN NANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

Surface Review and Letters ◽

10.1142/s0218625x04006566 ◽

2004 ◽

Vol 11 (06) ◽

pp. 515-519 ◽

Cited By ~ 3

Author(s):

M. XU ◽

V. M. NG ◽

S. Y. HUANG ◽

S. Y. XU

Keyword(s):

Low Temperature ◽

Magnetron Sputtering ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Diffraction Intensity ◽

Temperature Growth ◽

Low Temperature Growth ◽

Pl Intensity ◽

Aln Buffer ◽

Nanoparticle Film

Low-temperature growth of SiCN nanoparticle films on an AlN buffer layer on Si (100) by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation of SiC diffraction intensity is also observed in XRD spectra. The photoluminescence of the SiCN film is discussed on the base of the morphological, structural and elemental analyse.

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Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

Thin Solid Films ◽

10.1016/j.tsf.2014.11.076 ◽

2015 ◽

Vol 581 ◽

pp. 39-47 ◽

Cited By ~ 16

Author(s):

Tetsuhide Shimizu ◽

Yoshikazu Teranishi ◽

Kazuo Morikawa ◽

Hidetoshi Komiya ◽

Tomotaro Watanabe ◽

...

Keyword(s):

Low Temperature ◽

Magnetron Sputtering ◽

Pulse Duration ◽

High Power ◽

High Hardness ◽

Wurtzite Phase ◽

Temperature Growth ◽

Low Temperature Growth

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