Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Perry C. Grant; Dongsheng Fan; Aboozar Mosleh; Shui-Qing Yu; Vitaliy G. Dorogan; Michael E. Hawkridge; Yuriy I. Mazur; Mourad Benamara; Gregory J. Salamo; Shane R. Johnson

doi:10.1116/1.4868110

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4868110 ◽

2014 ◽

Vol 32 (2) ◽

pp. 02C119 ◽

Cited By ~ 11

Author(s):

Perry C. Grant ◽

Dongsheng Fan ◽

Aboozar Mosleh ◽

Shui-Qing Yu ◽

Vitaliy G. Dorogan ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Annealing Effect ◽

Single Quantum

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Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1367276 ◽

2001 ◽

Vol 78 (17) ◽

pp. 2488-2490 ◽

Cited By ~ 8

Author(s):

L. H. Li ◽

Z. Pan ◽

Y. Q. Xu ◽

Y. Du ◽

Y. W. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Single Quantum

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Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence

Journal of Electronic Materials ◽

10.1007/s11664-003-0249-1 ◽

2003 ◽

Vol 32 (1) ◽

pp. 29-33 ◽

Cited By ~ 9

Author(s):

Sridhar Govindaraju ◽

Jason M. Reifsnider ◽

Michael M. Oye ◽

Archie L. Holmes

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Temperature Dependence ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam

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Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590860 ◽

1999 ◽

Vol 17 (5) ◽

pp. 1997 ◽

Cited By ~ 20

Author(s):

Jyh-Shyang Wang ◽

Hao-Hsiung Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Gas Source

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Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Journal of Electronic Materials ◽

10.1007/s11664-004-0211-x ◽

2004 ◽

Vol 33 (8) ◽

pp. 851-860 ◽

Cited By ~ 7

Author(s):

Sridhar Govindaraju ◽

Jason M. Reifsnider ◽

Michael M. Oye ◽

Archie L. Holmes

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Photoluminescence Properties ◽

Annealing Effects

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Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect

Applied Physics Letters ◽

10.1063/1.3491798 ◽

2010 ◽

Vol 97 (11) ◽

pp. 112110 ◽

Cited By ~ 21

Author(s):

Young S. Park ◽

Minyoung Lee ◽

Kiyoung Jeon ◽

Im T. Yoon ◽

Yoon Shon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Deep Level ◽

Annealing Effect ◽

Transient Spectroscopy

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Molecular beam epitaxial growth and rapid thermal annealing effect of digital-alloy (In/sub 0.53/Ga/sub 0.47/As)/sub 1-z/(In/sub 0.52/Al/sub 0.48/As)/sub z/ lattice-matched to InP for 1.3-1.55 μm multi-quantum wells

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014407 ◽

2003 ◽

Cited By ~ 2

Author(s):

Jin Dong Song ◽

Jong Min Kim ◽

Jae Su Yu ◽

Seong Ju Bae ◽

Yong Tak Lee

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Annealing Effect ◽

Molecular Beam Epitaxial ◽

Digital Alloy ◽

Molecular Beam Epitaxial Growth ◽

Lattice Matched

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Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.371852 ◽

2000 ◽

Vol 87 (1) ◽

pp. 245-248 ◽

Cited By ~ 48

Author(s):

L. H. Li ◽

Z. Pan ◽

W. Zhang ◽

Y. W. Lin ◽

Z. Q. Zhou ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structure

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Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1289916 ◽

2000 ◽

Vol 77 (9) ◽

pp. 1280-1282 ◽

Cited By ~ 121

Author(s):

Z. Pan ◽

L. H. Li ◽

W. Zhang ◽

Y. W. Lin ◽

R. H. Wu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam

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GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583761 ◽

1987 ◽

Vol 5 (3) ◽

pp. 822 ◽

Cited By ~ 32

Author(s):

N. Chand

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Avalanche Photodiodes ◽

Crystalline Quality

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Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.05.058 ◽

2004 ◽

Vol 269 (2-4) ◽

pp. 181-186 ◽

Cited By ~ 11

Author(s):

G.X. Shi ◽

P. Jin ◽

B. Xu ◽

C.M. Li ◽

C.X. Cui ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Molecular Beam ◽

Atomic Layer ◽

Annealing Effect

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