Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

2001 ◽  
Vol 78 (17) ◽  
pp. 2488-2490 ◽  
Author(s):  
L. H. Li ◽  
Z. Pan ◽  
Y. Q. Xu ◽  
Y. Du ◽  
Y. W. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Single Quantum

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1280-1282 ◽  
Author(s):  
Z. Pan ◽  
L. H. Li ◽  
W. Zhang ◽  
Y. W. Lin ◽  
R. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

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