Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

2014 ◽  
Vol 32 (2) ◽  
pp. 020606 ◽  
Author(s):  
Andrew N. Cloud ◽  
Luke M. Davis ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Iron Cobalt ◽  
Tert Butyl ◽  
Nickel Nitride ◽  
Cobalt And Nickel

Spin ordering contribution of iron, cobalt, and nickel impurity electron states, to the low-temperature magnetic susceptibility of mercury selenide crystals

2015 ◽  
Vol 41 (2) ◽  
pp. 154-156 ◽  
Author(s):  
T. E. Govorkova ◽  
A. T. Lonchakov ◽  
V. I. Okulov ◽  
M. D. Andriichuk ◽  
A. F. Gubkin ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Low Temperature ◽  
Iron Cobalt ◽  
Electron States ◽  
Spin Ordering ◽  
Mercury Selenide ◽  
Cobalt And Nickel

In situ N K-edge XANES study of iron, cobalt and nickel nitride thin films

2021 ◽  
Vol 28 (5) ◽  
Author(s):  
Nidhi Pandey ◽  
Mukul Gupta ◽  
D. M. Phase ◽  
Ajay Gupta
Keyword(s):  
Thin Films ◽  
Iron Nitride ◽  
Growth Stages ◽  
Edge Structure ◽  
Highly Sensitive ◽  
Nickel Nitride ◽  
X Ray Absorption ◽  
Different Growth Stages ◽  
Cobalt And Nickel

A prototype in situ X-ray absorption near-edge structure (XANES) system was developed to explore its sensitivity for ultra-thin films of iron-nitride (Fe-N), cobalt-nitride (Co-N) and nickel-nitride (Ni-N). They were grown using DC-magnetron sputtering in the presence of an N2 plasma atmosphere at the experimental station of the soft XAS beamline BL01 (Indus-2, RRCAT, India). XANES measurements were performed at the N K-edge in all three cases. It was found that the N K-edge spectral shape and intensity are greatly affected by increasing thickness and appear to be highly sensitive, especially in low-thickness regions. From a certain thickness of ∼1000 Å, however, samples exhibit a bulk-like behavior. On the basis of the obtained results, different growth stages were identified. Furthermore, the presence of a molecular N2 component in the ultra-thin regime (<100 Å) was also obtained in all three cases studied in this work. In essence, this prototype in situ system reveals that N K-edge XANES is a powerful technique for studying ultra-thin films, and the development of a dedicated in situ system can be effective in probing several phenomena that remain hitherto unexplored in such types of transition metal nitride thin films.

Low temperature pressure dependence of the muon hyperfine fields in iron, cobalt and nickel

1987 ◽  
Vol 67 (1) ◽  
pp. 130-138 ◽  
Author(s):  
B. Lindgren ◽  
O. Hartmann ◽  
E. Karlsson ◽  
R. Wäppling ◽  
A. Yaouanc ◽  
...  
Keyword(s):  
Low Temperature ◽  
Pressure Dependence ◽  
Hyperfine Fields ◽  
Iron Cobalt ◽  
Cobalt And Nickel

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films
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