Fabrication of p-type silicon nanowires for 3D FETs using focused ion beam

2013 ◽  
Vol 31 (6) ◽  
pp. 06FA01 ◽  
Author(s):  
Marcos V. Puydinger dos Santos ◽  
Lucas P. B. Lima ◽  
Jose A. Diniz ◽  
Jose Godoy Filho
Keyword(s):  
Silicon Nanowires ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Type Silicon ◽  
P Type

scholarly journals Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82121-82126 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Takahiro Kozeki ◽  
Toan Dinh ◽  
Tatsuya Fujii ◽  
Afzaal Qamar ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
Mechanical Sensors ◽  
P Type

This work reports the piezoresistance of silicon nanowires fabricated using focused ion beam and wet etching for NEMS mechanical sensors.

Nanoscale Electrochemical Deposition of Metals on FIB Sensitized p-Type Silicon

2001 ◽  
Vol 705 ◽  
Author(s):  
Adrian Spiegel ◽  
M. Döbeli ◽  
Patrik Schmuki
Keyword(s):  
Electrochemical Deposition ◽  
Focused Ion Beam ◽  
Electrochemical Reaction ◽  
Ion Beam ◽  
Metal Structure ◽  
Lateral Resolution ◽  
Type Silicon ◽  
Defect Sites ◽  
P Type

AbstractSub-micrometer copper nanostructures were deposited on p-type silicon (p-Si) by means of a selective electrochemical reaction. Ga+-ions from a focused ion beam (FIB) were used to 'write' damage patterns on p-Si; in a subsequent electrochemical reaction Cu was deposited selectively at these defect sites. So far we have been able to obtain Cu structures with a lateral resolution of 300nm, which is also the limit of the FIB currently used.The process may offer advantages over traditional lithographic methods for producing nanometer sized metal structure on Si as no masking steps are required. Also, structures with a lateral resolution in the sub- 100nm region seem possible; so far the process has only been limited by the FIB's lateral resolution.

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

Enhancement of Photoelectrochemical Hydrogen Evolution of P-Type Silicon Nanowires Array by Loading MoS2

Silicon ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 1963-1970
Author(s):  
Lei Qiao ◽  
Mingjia Liao ◽  
Kaiwei Fang ◽  
Xiaolan He ◽  
Yunhuai Zhang
Keyword(s):  
Hydrogen Evolution ◽  
Silicon Nanowires ◽  
Type Silicon ◽  
P Type ◽  
Nanowires Array

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Characterization of Si, SiGe and SOI Structures Using Photoluminescence

1999 ◽  
Vol 588 ◽  
Author(s):  
V. Higgs
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Surface Region ◽  
Misfit Dislocations ◽  
Near Surface ◽  
Pl Mapping ◽  
Excitation Laser ◽  
Pl Intensity ◽  
P Type

AbstractA new Photoluminescence (PL) method has been developed to detect defects in the near surface region of Si wafers and Si-on-insulator (SOI) structures. Wafer maps (up to 300 min diameter) can be readily acquired and areas of interest can be scanned at high resolution (≈1 μm). The excitation laser beam is modulated to confine the photogenerated carriers; defects are observed due to the localised reduction of the carrier lifetime. Si p-type (10 Ohm.cm) wafers were intentionally contaminated with various levels of Ni and Fe (1×109−5×1010 atoms/cm2) and annealed. The PL intensity was observed to decrease due to the metal related non-radiative defects. Whereas in contrast, for Cu, (1×109−5×1010 atoms/cm2) the PL intensity actually increased initially and reached a maximum value at 5×109 atoms/cm2. It is suggested that during contamination the Cu related defects have complexed with existing defects (that have stronger recombination properties) and increased the PL. Further Cu contamination (1×1010−5×1010 atoms/cm2) produced a reduction in the PL intensity. PL mapping of strained SiGe epilayers showed that misfit dislocations can be detected and PL can be used to evaluate material quality.PL maps of SOI bonded wafers revealed that the non-bonded areas, voids or gas bubbles could be detected. This was confirmed using defect etching and polishing, voids as small as ≈30 μm in diameter could be detected. SOI wafers fabricated using the separation by implanted oxygen (SIMOX) technique were also analysed, variations in the recombination properties of the layer could be observed. Further inspection using transmission electron microscopy (TEM) revealed that the defects were non-uniformities of the buried oxide covering several microns and containing tetrahedral stacking faults. Focused ion beam (FIB) milling and secondary ion mass spectrometry (SIMS) showed that these defects were at the Si/SiO2 interface and were chemically different to the surrounding area.

29pm2-F-3 Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

2015 ◽  
Vol 2015.7 (0) ◽  
pp. _29pm2-F-3-_29pm2-F-3
Author(s):  
Takahiro Kozeki ◽  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Shozo Inoue ◽  
Takahiro Namazu
Keyword(s):  
Silicon Nanowires ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
P Type

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires

2011 ◽  
Vol 22 (7) ◽  
pp. 075206 ◽  
Author(s):  
Abhishek Motayed ◽  
John E Bonevich ◽  
Sergiy Krylyuk ◽  
Albert V Davydov ◽  
Geetha Aluri ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type
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