Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

2013 ◽  
Vol 31 (4) ◽  
pp. 041503 ◽  
Author(s):  
Pouya Moetakef ◽  
Jack Y. Zhang ◽  
Santosh Raghavan ◽  
Adam P. Kajdos ◽  
Susanne Stemmer
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rare Earth Titanate

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

1989 ◽  
Vol 151 ◽  
Author(s):  
W. R. Bennett ◽  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
E. E. Marinero
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Metal ◽  
Molecular Beam ◽  
Earth Metal ◽  
Magnetic Ordering ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Components

ABSTRACTWe report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

RELAXATION PROCESS OF ELECTORON-HOLE PAIRS IN Yb-DOPED AlAs/GaAs SUPERLATTICE IN HIGH MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Magnetic Fields ◽  
Relaxation Process ◽  
Molecular Beam ◽  
High Magnetic Fields ◽  
Molecular Beam Epitaxy Method ◽  
Rare Earth Doped ◽  
Photoluminescence Peak ◽  
The Rare Earth

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.

Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Local Structure ◽  
Molecular Beam ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
The Eu

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 204 (1) ◽  
pp. 290-293 ◽  
Author(s):  
Y. Hori ◽  
T. Andreev ◽  
E. Bellet-Amalric ◽  
O. Oda ◽  
D. Le Si Dang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rare Earth Doping

Incorporation kinetics of rare‐earth elements in Si during molecular beam epitaxy

1995 ◽  
Vol 67 (2) ◽  
pp. 235-237 ◽  
Author(s):  
K. Miyashita ◽  
Y. Shiraki ◽  
D. C. Houghton ◽  
S. Fukatsu
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Elements ◽  
Molecular Beam ◽  
Kinetics Of

Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy

1994 ◽  
Vol 75 (8) ◽  
pp. 4171-4175 ◽  
Author(s):  
D. Seghier ◽  
T. Benyattou ◽  
A. Kalboussi ◽  
S. Moneger ◽  
G. Marrakchi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Er Doped

Enhanced Luminescence From Rare Earth Doped Thin Films

1994 ◽  
Vol 348 ◽  
Author(s):  
B. L. Olmsted ◽  
M. L. Jones
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Experimental Work ◽  
Molecular Beam ◽  
Rare Earth Ions ◽  
Optimum Thickness ◽  
Narrow Resonance ◽  
Enhanced Luminescence ◽  
Rare Earth Doped

ABSTRACTResults of a study of the luminescence of rare earth ions in crystalline thin films grown on reflective substrates will be presented. As an example, the luminescence of Sm2+:CaF2 films has been calculated as a function of the separation between the active layer and a silicon substrate. These calculations involve coupling the narrow resonance of the rare earth ions to the electromagnetic modes of the film. Results including the optimum thickness for enhanced luminescence will be presented. Experimental work on Sm2+:CaF2 films grown on Si by molecular beam epitaxy will also be discussed.

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