Enhanced Luminescence From Rare Earth Doped Thin Films

1994 ◽  
Vol 348 ◽  
Author(s):  
B. L. Olmsted ◽  
M. L. Jones
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Experimental Work ◽  
Molecular Beam ◽  
Rare Earth Ions ◽  
Optimum Thickness ◽  
Narrow Resonance ◽  
Enhanced Luminescence ◽  
Rare Earth Doped

ABSTRACTResults of a study of the luminescence of rare earth ions in crystalline thin films grown on reflective substrates will be presented. As an example, the luminescence of Sm2+:CaF2 films has been calculated as a function of the separation between the active layer and a silicon substrate. These calculations involve coupling the narrow resonance of the rare earth ions to the electromagnetic modes of the film. Results including the optimum thickness for enhanced luminescence will be presented. Experimental work on Sm2+:CaF2 films grown on Si by molecular beam epitaxy will also be discussed.

RELAXATION PROCESS OF ELECTORON-HOLE PAIRS IN Yb-DOPED AlAs/GaAs SUPERLATTICE IN HIGH MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Magnetic Fields ◽  
Relaxation Process ◽  
Molecular Beam ◽  
High Magnetic Fields ◽  
Molecular Beam Epitaxy Method ◽  
Rare Earth Doped ◽  
Photoluminescence Peak ◽  
The Rare Earth

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

As-Grown Superconducting SmFeAs(O,F) Thin Films by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (5) ◽  
pp. 053101 ◽  
Author(s):  
Shinya Ueda ◽  
Soichiro Takeda ◽  
Shiro Takano ◽  
Michio Naito
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

1989 ◽  
Vol 151 ◽  
Author(s):  
W. R. Bennett ◽  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
E. E. Marinero
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Metal ◽  
Molecular Beam ◽  
Earth Metal ◽  
Magnetic Ordering ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Components

ABSTRACTWe report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

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