Low-temperature (≤200 °C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

2013 ◽  
Vol 31 (1) ◽  
pp. 01A137 ◽  
Author(s):  
Nigamananda Samal ◽  
Hui Du ◽  
Russell Luberoff ◽  
Krishna Chetry ◽  
Randhir Bubber ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Dense Titanium

Al 2 O 3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

2019 ◽  
Vol 217 (8) ◽  
pp. 1900237
Author(s):  
Zhen Zhu ◽  
Saoussen Merdes ◽  
Oili M. E. Ylivaara ◽  
Kenichiro Mizohata ◽  
Mikko J. Heikkilä ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thermal Plasma ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Area‐Selective Growth of HfS 2 Thin Films via Atomic Layer Deposition at Low Temperature

2020 ◽  
Vol 7 (23) ◽  
pp. 2001493
Author(s):  
Yuanyuan Cao ◽  
Tobias Wähler ◽  
Hyoungwon Park ◽  
Johannes Will ◽  
Annemarie Prihoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Selective Growth ◽  
Layer Deposition

scholarly journals Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

2015 ◽  
Vol 27 (18) ◽  
pp. 6322-6328 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Ignasi Fina ◽  
Zakariya Khayat ◽  
Andy Quindeau ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Bifeo3 Thin Films ◽  
Layer Deposition

Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

2017 ◽  
Vol 29 (15) ◽  
pp. 6502-6510 ◽  
Author(s):  
Katja Väyrynen ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Daniel Peeters ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tertiary Butyl ◽  
Low Resistivity ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low-Temperature Film Growth

2017 ◽  
Vol 4 (18) ◽  
pp. 1700123 ◽  
Author(s):  
Miika Mattinen ◽  
Timo Hatanpää ◽  
Tiina Sarnet ◽  
Kenichiro Mizohata ◽  
Kristoffer Meinander ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Deposition

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

2017 ◽  
Vol 727 ◽  
pp. 907-914
Author(s):  
Wen Hui Tang ◽  
Yi Jia ◽  
Bo Cheng Zhang ◽  
Chang Wei Yang ◽  
You Zhi Qu ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Gas Mixture ◽  
X Ray ◽  
Layer Deposition

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

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