scholarly journals Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene

2012 ◽  
Vol 30 (3) ◽  
pp. 03D103 ◽  
Author(s):  
Jeongmin Hong ◽  
Sandip Niyogi ◽  
Elena Bekyarova ◽  
Mikhail E. Itkis ◽  
Palanisamy Ramesh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene ◽  
Electrostatic Charging

Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

2012 ◽  
Vol 111 (11) ◽  
pp. 114307 ◽  
Author(s):  
K. Grodecki ◽  
J. A. Blaszczyk ◽  
W. Strupinski ◽  
A. Wysmolek ◽  
R. Stępniewski ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene ◽  
Graphene Layers

scholarly journals Raman spectroscopy of epitaxial graphene on a SiC substrate

2008 ◽  
Vol 77 (11) ◽  
Author(s):  
Z. H. Ni ◽  
W. Chen ◽  
X. F. Fan ◽  
J. L. Kuo ◽  
T. Yu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene

scholarly journals Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 565-568 ◽  
Author(s):  
Rositza Yakimova ◽  
Chariya Virojanadara ◽  
Daniela Gogova ◽  
Mikael Syväjärvi ◽  
D. Siche ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Theoretical Studies ◽  
Large Area ◽  
Layer Graphene ◽  
Spatial Uniformity ◽  
Formation Conditions

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)

2015 ◽  
Vol 821-823 ◽  
pp. 957-960
Author(s):  
Yan Fei Hu ◽  
Hui Guo ◽  
Yu Ming Zhang ◽  
Yi Men Zhang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Peak Position ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Homogeneous Area ◽  
Few Layer Graphene ◽  
Scanning Electron

Large-area epitaxial graphene formed on C-face SiC has been investigated by Raman Spectroscopy and SEM (scanning electron microscopy). Local Raman spectra showed a large homogeneous area of high quality epitaxial FLG (few layer graphene) has been fabricated on C-face SiC. Our work reveals unexpectedly the shift in Raman peak position across the samples resulting from the inhomogeneity in the strains and impurities of the graphene films, which we exhibit to be correlated with physical topography by combining Raman spectroscopy with scanning electron microscopy (SEM)

Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy

2012 ◽  
Vol 717-720 ◽  
pp. 661-664 ◽  
Author(s):  
Kevin M. Daniels ◽  
Biplob K. Daas ◽  
Nishtha Srivastava ◽  
Christopher Williams ◽  
Randall M. Feenstra ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Electrochemical Cell ◽  
Epitaxial Graphene ◽  
Ratio Increase ◽  
Dependent Effect ◽  
Before And After ◽  
Graphene Functionalization ◽  
G Ratio ◽  
Bond Peak

Electrochemical functionalization of treated epitaxial graphene samples on Si-face 6H-SiC are presented in this work. Three semi-insulating 6H-SiC substrates cut from different boules with varying off cut angle (on axis, 0.5° and 1.0° degrees off axis in the [112‾0] direction) were diced into 10mm x 10mm samples and quality EG grown on top. A home-build electrochemical cell was used with current applied though a 10% H2SO4 solution, with a Pt wire and exposed graphene as the anode and cathode respectively. Functionalization was determined using Raman spectroscopy and measured by an increase in D/G ratio, increase in fluorescence background and introduction of C-H bond peak at ~2930 cm-1. Components of the Raman spectra before and after functionalization of all samples used were analyzed to show a substrate dependent effect on functionalization with values such as D/G ratio and normalized fluorescence slope varying between the substrates.

Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy

2015 ◽  
Vol 17 (43) ◽  
pp. 28993-28999 ◽  
Author(s):  
Sanpon Vantasin ◽  
Yoshito Tanaka ◽  
Shohei Uemura ◽  
Toshiaki Suzuki ◽  
Yasunori Kutsuma ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene ◽  
Graphene Island ◽  
Tip Enhanced Raman Spectroscopy

Tip-enhanced Raman spectroscopy of the nanoridge of a graphene island.

Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

2010 ◽  
Vol 645-648 ◽  
pp. 603-606 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Florian Speck ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Graphene Layer ◽  
Tensile Strain ◽  
Lattice Mismatch ◽  
Mechanical Strain ◽  
Epitaxial Graphene ◽  
Preparation Process ◽  
High Temperature Annealing ◽  
Graphene Layers

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6 p 3 6 p 3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene.

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Carbon ◽  
2020 ◽  
Vol 170 ◽  
pp. 666-676
Author(s):  
B. Hähnlein ◽  
S.P. Lebedev ◽  
I.A. Eliseyev ◽  
A.N. Smirnov ◽  
V.Y. Davydov ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Line Width ◽  
Phonon Mode ◽  
Epitaxial Graphene

Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy

2014 ◽  
Vol 778-780 ◽  
pp. 1166-1169
Author(s):  
Felix Fromm ◽  
Martin Hundhausen ◽  
Michl Kaiser ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Graphene Layer ◽  
Scattered Light ◽  
Epitaxial Graphene ◽  
Raman Intensity ◽  
Top Down ◽  
Measurement Geometry

Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an approach to improve the Raman intensity of epitaxial graphene on SiC by recording Raman spectra in a top-down geometry, i.e. a geometry in which the graphene layer is probed with the excitation through the SiC substrate [1]. This technique takes advantage of the fact, that most of the Raman scattered light of the graphene is emitted into the SiC substrate. We analyze in detail the top-down measurement geometry regarding the graphene and SiC Raman intensity, as well as the influence of aberration effects caused by the refraction at the air/SiC interface.

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