Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

2012 ◽  
Vol 111 (11) ◽  
pp. 114307 ◽  
Author(s):  
K. Grodecki ◽  
J. A. Blaszczyk ◽  
W. Strupinski ◽  
A. Wysmolek ◽  
R. Stępniewski ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene ◽  
Graphene Layers

Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

2010 ◽  
Vol 645-648 ◽  
pp. 603-606 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Florian Speck ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Graphene Layer ◽  
Tensile Strain ◽  
Lattice Mismatch ◽  
Mechanical Strain ◽  
Epitaxial Graphene ◽  
Preparation Process ◽  
High Temperature Annealing ◽  
Graphene Layers

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6 p 3 6 p 3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene.

Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC substrate and an associated strain distribution

2013 ◽  
Vol 539 ◽  
pp. 377-383 ◽  
Author(s):  
A. Ben Gouider Trabelsi ◽  
A. Ouerghi ◽  
O.E. Kusmartseva ◽  
F.V. Kusmartsev ◽  
M. Oueslati
Keyword(s):  
Raman Spectroscopy ◽  
Strain Distribution ◽  
Epitaxial Graphene ◽  
Graphene Layers

Probing residual strain in epitaxial graphene layers on 4H-SiC(0001¯) with Raman spectroscopy

2011 ◽  
Vol 98 (5) ◽  
pp. 051910 ◽  
Author(s):  
A. J. Strudwick ◽  
G. L. Creeth ◽  
N. A. B. Johansson ◽  
C. H. Marrows
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Epitaxial Graphene ◽  
Graphene Layers

scholarly journals Manipulating the surface-enhanced Raman spectroscopy (SERS) activity and plasmon-driven catalytic efficiency by the control of Ag NP/graphene layers under optical excitation

Nanophotonics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1529-1540
Author(s):  
Xianwu Xiu ◽  
Liping Hou ◽  
Jing Yu ◽  
Shouzhen Jiang ◽  
Chonghui Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Hot Spot ◽  
Catalytic Efficiency ◽  
Surface Enhanced Raman Spectroscopy ◽  
In Situ Monitoring ◽  
Excitation Beam ◽  
Graphene Layers ◽  
Cu Film ◽  
Surface Enhanced ◽  
Surface Enhanced Raman

Abstract Highly efficient plasmon-driven catalysis and excellent surface-enhanced Raman spectroscopy (SERS) performance are proportional to the square of the local electromagnetic field (hot spot). However, a proven way to realize the enhancement in intensity and density of “hot spot” still needs to be investigated. Here, we report on multilayered Ag nanoparticle (Ag NP)/graphene coupled to an underlying Cu film system (MAgNP-CuF) which can be used as an effective SERS substrates realizing ultra-sensitive detection for toxic molecules and in situ monitoring the plasmon-driven reaction for p-nitrothiophenol (PNTP) to p,p′-dimercaptobenzene (DMAB) conversion. The mechanism of ultra-sensitive SERS response and catalytic reaction is investigated via Ag NP/graphene layer-dependent experiments combined with theoretical simulations. The research found that the intensity and density of “hot spot” can be effectively manipulated by the number of plasmonic layers, and the bottom Cu film could also reflect the scattered and excitation beam and would further enhance the Raman signals. Moreover, the MAgNP-CuF exhibits outstanding performance in stability and reproducibility. We believe that this concept of multilayered plasmonic structures would be widely used not only in the field of SERS but also in the wider research in photocatalysis.

Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 611-614
Author(s):  
Susumu Kamoi ◽  
Noriyuki Hasuike ◽  
Kenji Kisoda ◽  
Hiroshi Harima ◽  
Kouhei Morita ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Peak Frequency ◽  
Epitaxial Graphene ◽  
Intensity Increase ◽  
Band Frequency ◽  
Graphene Layers ◽  
Exfoliated Graphene ◽  
Uv Raman Spectroscopy ◽  
Uv Raman ◽  
Deep Ultraviolet

We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

scholarly journals Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces

2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Paweł Borowicz ◽  
Adrian Kuchuk ◽  
Zbigniew Adamus ◽  
Michał Borysiewicz ◽  
Marek Ekielski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Thermal Treatment ◽  
Ohmic Contacts ◽  
Carbon Film ◽  
Graphene Layers ◽  
Three Samples ◽  
Nickel Silicon

The structure of carbonic layer in three samples composed of 4H polytype of silicon carbide and the following sequence of layers: carbon/nickel/silicon/nickel/silicon was investigated with Raman spectroscopy. Different thermal treatment of the samples led to differences in the structure of carbonic layer. Raman measurements were performed with visible excitation focused on two interfaces: silicon carbide/carbon and carbon/silicide. The results showed differences in the structure across carbon film although its thickness corresponds to 8/10 graphene layers.

Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

2012 ◽  
Vol 116 (35) ◽  
pp. 19046-19050 ◽  
Author(s):  
Martin Kalbac ◽  
Jing Kong ◽  
Mildred S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Raman spectroscopy of epitaxial graphene on a SiC substrate

2008 ◽  
Vol 77 (11) ◽  
Author(s):  
Z. H. Ni ◽  
W. Chen ◽  
X. F. Fan ◽  
J. L. Kuo ◽  
T. Yu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Epitaxial Graphene
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