Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors

2012 ◽  
Vol 30 (1) ◽  
pp. 011205 ◽  
Author(s):  
Chien-Fong Lo ◽  
L. Liu ◽  
T. S. Kang ◽  
Fan Ren ◽  
O. Laboutin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Properties ◽  
Electron Mobility ◽  
Layer Structure ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer

AlGaN Channel High Electron Mobility Transistors with an Al x Ga 1−x N/GaN Composite Buffer Layer

2015 ◽  
Vol 32 (7) ◽  
pp. 077205 ◽  
Author(s):  
Xiang-Dong Li ◽  
Jin-Cheng Zhang ◽  
Yu Zou ◽  
Xue-Zhi Ma ◽  
Chang Liu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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