scholarly journals CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

1996 ◽  
Vol 69 (8) ◽  
pp. 1143-1144 ◽  
Author(s):  
C. C. Hsu ◽  
Y. F. Yang ◽  
H. J. Ou ◽  
E. S. Yang
2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  

2015 ◽  
Vol 32 (7) ◽  
pp. 077205 ◽  
Author(s):  
Xiang-Dong Li ◽  
Jin-Cheng Zhang ◽  
Yu Zou ◽  
Xue-Zhi Ma ◽  
Chang Liu ◽  
...  

2014 ◽  
Vol 105 (11) ◽  
pp. 113508 ◽  
Author(s):  
A. Bairamis ◽  
Ch. Zervos ◽  
A. Adikimenakis ◽  
A. Kostopoulos ◽  
M. Kayambaki ◽  
...  

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