CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors
2017 ◽
Vol 56
(10)
◽
pp. 108003
◽
2012 ◽
Vol 30
(1)
◽
pp. 011205
◽
2015 ◽
Vol 32
(7)
◽
pp. 077205
◽
2020 ◽
Vol 1697
◽
pp. 012206