High aspect ratio fine pattern transfer using a novel mold by nanoimprint lithography

2011 ◽  
Vol 29 (6) ◽  
pp. 06FC15 ◽  
Author(s):  
J. Sakamoto ◽  
N. Fujikawa ◽  
N. Nishikura ◽  
H. Kawata ◽  
M. Yasuda ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Nanoimprint Lithography ◽  
Pattern Transfer ◽  
Fine Pattern

Simple Nanoimprint Lithography with 50 nm Resolution Using Vacuum Packing

2010 ◽  
Vol 459 ◽  
pp. 111-115 ◽  
Author(s):  
Kazuo Itoh ◽  
Hirokazu Hirai ◽  
Tetsuya Ando ◽  
Kazuya Takagi ◽  
Katsuya Noguchi
Keyword(s):  
Aspect Ratio ◽  
Line Width ◽  
High Aspect Ratio ◽  
Glass Substrate ◽  
Atmospheric Pressure ◽  
Nanoimprint Lithography ◽  
Viscous Force ◽  
Pressing Pressure ◽  
Simple Method ◽  
Fine Pattern

We demonstrated a simple UV nanoimprint method using vacuum packing. A glass substrate and a Si mold dropped with a photo-curable resist were vacuum-packed together in a packing sheet. They were pressed by atmospheric pressure and easily fixed without a complicated apparatus. We obtained a successful nanoimprint result for 100 nm width lines with high aspect ratio of 3.2. Further fine pattern of about 50 nm line width was also replicated using our simple method. The remaining thickness of the resist after imprint decreased with increasing the pressing pressure　whereas it saturated due to the viscosity of the resist. This saturation tendency is well explained by the balance between the pressing force and the viscous force of the resist.

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

2019 ◽  
Vol 58 (SE) ◽  
pp. SE0802 ◽  
Author(s):  
Taku Iwase ◽  
Yoshito Kamaji ◽  
Song Yun Kang ◽  
Kazunori Koga ◽  
Nobuyuki Kuboi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Pattern Transfer ◽  
Fine Pattern

Scalable Nanoimprint Lithography Process for Manufacturing Visible Metasurfaces Composed of High Aspect Ratio TiO2 Meta-Atoms

ACS Photonics ◽  
2021 ◽  
Author(s):  
Vincent J. Einck ◽  
Mahsa Torfeh ◽  
Andrew McClung ◽  
Dae Eon Jung ◽  
Mahdad Mansouree ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Nanoimprint Lithography ◽  
Lithography Process

Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

2019 ◽  
Vol 210 ◽  
pp. 8-13 ◽  
Author(s):  
Li-Ting Tseng ◽  
Dimitrios Kazazis ◽  
Xiaolong Wang ◽  
Carmen M. Popescu ◽  
Alex P.G. Robinson ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Pattern Transfer

Fluorocarbon film-assisted fabrication of a CoNi mold with high aspect ratio for nanoimprint lithography

2013 ◽  
Vol 104 ◽  
pp. 58-63 ◽  
Author(s):  
Rizwan Muhammad ◽  
Si-Hyeong Cho ◽  
Jung-Hwan Lee ◽  
Jin-Goo Park
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Nanoimprint Lithography ◽  
Fluorocarbon Film

scholarly journals Achieving High Aspect Ratio of Track Length to Width in Molds for Discrete Track Recording Media

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
K. O. Aung ◽  
C. Shankaran ◽  
R. Sbiaa ◽  
E. L. Tan ◽  
S. K. Wong ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Nanoimprint Lithography ◽  
Hard Disk Drives ◽  
Thick Layer ◽  
Track Length ◽  
Disk Drives ◽  
Optimal Parameters ◽  
Discrete Track ◽  
Fabrication Parameters

Discrete track media (DTM) fabricated by nanoimprint lithography (NIL) is considered as a potential technology for future hard disk drives (HDD). In the fabrication of a master mold for NIL, patterning the resist tracks with a narrow distribution in the width is the first critical step. This paper reports the challenges involved in the fabrication of high aspect ratio discrete tracks on Polymethylmethacrylate (PMMA) resist by means of electron beam lithography. It was observed that fabrication parameters applied for successful patterning of discrete tracks in nanoscale length were not directly suitable for the patterning of discrete tracks in micron scale. Hence different approaches such as thick layer resist coating, introducing of post exposure baking process, and varying of exposure parameters were used in order to achieve uniform sharp discrete tracks in micron scale length on the resist. The optimal parameters were used to pattern 20 μm long tracks with 70 nm track pitch on the resist.

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