Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3

2011 ◽  
Vol 29 (4) ◽  
pp. 041206 ◽  
Author(s):  
Runsheng Wang ◽  
Min Xu ◽  
Peide D. Ye ◽  
Ru Huang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Atomic Layer

Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

2013 ◽  
Vol 103 (26) ◽  
pp. 261602 ◽  
Author(s):  
Shan Zheng ◽  
Wen Yang ◽  
Qing-Qing Sun ◽  
Lin Chen ◽  
Peng Zhou ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Atomic Layer ◽  
Height Reduction ◽  
High K

Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

2011 ◽  
Vol 99 (10) ◽  
pp. 102108 ◽  
Author(s):  
Brian E. Coss ◽  
Wei-Yip Loh ◽  
Herman Carlo Floresca ◽  
Moon J. Kim ◽  
Prashant Majhi ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Atomic Layer ◽  
Resistance Reduction

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Sign in / Sign up

Export Citation Format

Share Document