Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang; Myungsim Jun; Taehyoung Zyung

doi:10.1116/1.3457936

Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3457936 ◽

2010 ◽

Vol 28 (4) ◽

pp. 799-801 ◽

Cited By ~ 2

Author(s):

Moongyu Jang ◽

Myungsim Jun ◽

Taehyoung Zyung

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Mobility ◽

Effect Transistor ◽

Barrier Metal ◽

P Type

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A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Applied Physics Letters ◽

10.1063/1.4928589 ◽

2015 ◽

Vol 107 (6) ◽

pp. 063503 ◽

Cited By ~ 4

Author(s):

W. E. Purches ◽

A. Rossi ◽

R. Zhao ◽

S. Kafanov ◽

T. L. Duty ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cryogenic Temperatures ◽

Effect Transistor ◽

Barrier Metal

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A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.1645665 ◽

2004 ◽

Vol 84 (5) ◽

pp. 741-743 ◽

Cited By ~ 77

Author(s):

Moongyu Jang ◽

Yarkyeon Kim ◽

Jaeheon Shin ◽

Seongjae Lee ◽

Kyoungwan Park

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Effect Transistor ◽

Barrier Metal

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Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2013.02.099 ◽

2013 ◽

Vol 563 ◽

pp. 108-112

Author(s):

Hyung-Joong Yun ◽

Moongyu Jang ◽

Sung-Jin Choi ◽

Young-Boo Lee ◽

Kwang-Soon Ahn ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Annealing Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Effect Transistor ◽

Barrier Metal ◽

P Type

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Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

Applied Physics Letters ◽

10.1063/1.3200245 ◽

2009 ◽

Vol 95 (6) ◽

pp. 063508 ◽

Cited By ~ 3

Author(s):

Sungho Kim ◽

Sung-Jin Choi ◽

Moongyu Jang ◽

Yang-Kyu Choi

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Barrier Metal

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Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

P Type

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High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3592483 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032211 ◽

Cited By ~ 2

Author(s):

Myungsim Jun ◽

Youngsam Park ◽

Younghoon Hyun ◽

Taehyoung Zyung ◽

Moongyu Jang ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Barrier Metal ◽

P Type

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35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Cited By ~ 16

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type

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20-nm-gate-length erbium-/platinum-silicided n-∕p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3025726 ◽

2008 ◽

Vol 93 (19) ◽

pp. 192112 ◽

Cited By ~ 10

Author(s):

Moongyu Jang ◽

Cheljong Choi ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Barrier Metal ◽

P Type ◽

20 Nm

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Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.1520 ◽

2006 ◽

Vol 45 (3A) ◽

pp. 1520-1524

Author(s):

Yao-Jen Lee ◽

Pei-Tsang Ho ◽

Wen-Luh Yang ◽

Tien-Sheng Chao ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

P Type

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Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6278 ◽

2012 ◽

Vol 12 (7) ◽

pp. 5402-5406 ◽

Cited By ~ 3

Author(s):

Chang-Chun Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Strain Engineering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Etch Stop ◽

Etch Stop Layer ◽

Effect Transistor ◽

P Type

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