Ultrahigh vacuum sample mount for x-ray photoelectron spectroscopy up to very high temperature (150–1400 K)

2011 ◽  
Vol 29 (3) ◽  
pp. 031602 ◽  
Author(s):  
Mark S. Williamsen ◽  
Shishir K. Ray ◽  
Ying Zou ◽  
John A. Dudek ◽  
Somaditya Sen ◽  
...  
Keyword(s):  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Ultrahigh Vacuum ◽  
X Ray ◽  
Very High

Xps Analysis of the Sapphire Surface as a Function of High Temperature Vacuum Annealing

1989 ◽  
Vol 159 ◽  
Author(s):  
E.D. Richmond
Keyword(s):  
High Temperature ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Xps Analysis ◽  
Chemical Changes ◽  
Cleaning Procedure ◽  
Sapphire Surface ◽  
X Ray ◽  
First Time

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

2019 ◽  
Vol 963 ◽  
pp. 226-229
Author(s):  
Kidist Moges ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Annealing Duration ◽  
Nanometer Scale ◽  
Pure Nitrogen ◽  
X Ray ◽  
Initial Stage

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Seelmann-Eggebert ◽  
H. Zimmermann ◽  
H. Obloh ◽  
R. Niebuhr ◽  
B. Wachtendorf
Keyword(s):  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Short Range ◽  
Short Range Order ◽  
Thermal Treatments ◽  
Plasma Cleaning ◽  
Substrate Preparation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Mocvd Reactor

ABSTRACTThe influence of plasma and thermal treatments on the structure and composition of sapphire (00–1) surfaces have been studied by hemispherically recorded x-ray photoelectron spectroscopy in view of substrate preparation for the epitaxy of GaN. Producing well-ordered surfaces, O2 plasma based treatments are found to efficiently remove surface contamination. AlN films with good short-range order are obtained by a simple high temperature nitridation step in the MOCVD reactor.

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