Low-misfit epilayer analyses using in situ wafer curvature measurements

Author(s):  
Ryan France ◽  
Aaron J. Ptak
2018 ◽  
Vol 20 (43) ◽  
pp. 27350-27360 ◽  
Author(s):  
Yuxi Ma ◽  
Jason D. Nicholas

This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ, current-collector-free wafer curvature measurements.


1994 ◽  
Vol 356 ◽  
Author(s):  
H. E. Inglefield ◽  
G. Bochi ◽  
C. A. Ballentine ◽  
R. C. O’Handley ◽  
C. V. Thompson

AbstractEpitaxial misfit has been characterized in Ni/Cu/Si (100) as a function of Ni film thickness using wafer curvature measurements. This strain can be related to measurements of magnetic anisotropy made in the deposition system using the magneto-optic Kerr effect. Films were deposited using molecular beam epitaxy (MBE) with varying Ni epilayer thickness between 10 and 1000Å. The change in wafer curvature due to misfit strain was measured using optical interferometry and the strain was calculated using Stoney’s equation. Transmission electron microscopy was used to characterize misfit dislocations at the Ni/Cu interface. It has been determined that misfit strain can have a very strong effect on magnetic anisotropy, particularly in the regime between the critical thickness and complete misfit accommodation, where strain has been found to decrease significantly as a function of film thickness. A critical strain has been determined at which a transition in the direction of magnetization easy axis from perpendicular to the film to in the film plane occurs. This discovery allows the use of Kerr effect measurements to characterize misfit strain in situ.


1995 ◽  
Author(s):  
J. Hans F. Jongste ◽  
Tom Oosterlaken ◽  
G. C. Bart ◽  
Guido C. Janssen ◽  
Sybrand Radelaar

2005 ◽  
Vol 98 (7) ◽  
pp. 073532 ◽  
Author(s):  
C. Lynch ◽  
E. Chason ◽  
R. Beresford ◽  
L. B. Freund ◽  
K. Tetz ◽  
...  

1993 ◽  
Vol 308 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung

ABSTRACTWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AlSiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AlSiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.


2021 ◽  
Vol MA2021-02 (3) ◽  
pp. 365-365
Author(s):  
Jung Hwi Cho ◽  
Kun Joong Kim ◽  
Srinath Chakravarthy ◽  
Xingcheng Xiao ◽  
Jennifer L.M. Rupp ◽  
...  

2018 ◽  
Vol MA2018-01 (32) ◽  
pp. 1942-1942
Author(s):  
Yuxi Ma ◽  
Jason D. Nicholas

A Multi-beam Optical Stress Sensor (MOSS) is a curvature measurement platform which is commonly used to measure the film stress in bilayer samples. It has been widely used as an in-situ technique to measure the film stress during deposition.1 However, when combined with the dual substrate method proposed by Zhao et al,2 in situ curvature measurements can be used to measure Young’s moduli and thermo-chemical expansion coefficients simultaneously as a function of temperature. Using the curvature relaxation (κR) technique developed recently,3-5 oxygen surface exchange coefficients (kchem) can also be measured as a function of temperature using in situ curvature measurements. In this work, the Young’s moduli, thermo-chemical expansion coefficients and kchem values of praseodymium doped ceria (PCO) were measured as a function of temperature using a MOSS. First, phase pure Pr0.1Ce0.9O1.95 (PCO) powder was prepared through glycine nitrate combustion and subsequent calcination at 1100oC in air. This powder was then pressed in a stainless-steel die and fired to 1450oC to produce a pulsed laser deposition (PLD) target. In preparation for PLD, (001) oriented 9.5% yttria doped zirconia (YSZ) and (001) oriented magnesium oxide (MgO) substrates (Crystec, GmbH) were pre-annealed at 1450oC for 20 hours to remove residual stress within them. PCO PLD was then conducted at 680oC for 20 min, with a 10-2 torr oxygen partial pressure and 350 mJ power density. After deposition, the PCO bilayers were re-equilibrated with air by firing them in air at 1000oC for 1 hour. For dual substrates measurements, stress vs. temperature data for PCO|YSZ and PCO|MgO were collected with a 1oC/min heating rate and a 0.2oC/min cooling rate. The slopes of the stress vs. temperature curves can be expressed by: dσPCO|YSZ/dT = MPCO(αYSZ-αPCO) (1) dσPCO|MgO/dT = MPCO(αMgO-αPCO) (2) where is the stress of bilayer sample, T is the temperature, M is the biaxial modulus of the film, is the thermo-chemical expansion coefficient. With two unknowns and two equations, and were then extracted as a function of temperature. The Young’s moduli were then calculated from assuming a Poisson’s ratio of 0.33 as has been done previously for 6. For κR measurements, relaxation data were recorded at 650~725oC with 25oC increments. The oxygen partial pressure was switched between synthetic air (20%O2-80%Ar) and 10% diluted synthetic air (10% synthetic air-90%Ar). Figure 1 shows the Young’s modulus and thermo-chemical expansion coefficients measured here compared to other literature studies.6-8 In contrast to other studies the present study produced PCO Young’s moduli over a complete range of temperatures. In addition, the PCO Young’s moduli started to decrease significantly once the PCO started to become nonstoichiometric (as indicated by an uptick in chemical expansion in Figure 1b). The PCO kchem values (not shown) were in good agreement with the kchem values measured by other electrode-free techniques, such as optical relaxation.9 Figure 1


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