In-situ wafer curvature measurements during rapid thermal annealing of Si(100) wafers

1995 ◽  
Author(s):  
J. Hans F. Jongste ◽  
Tom Oosterlaken ◽  
G. C. Bart ◽  
Guido C. Janssen ◽  
Sybrand Radelaar
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Wafer Curvature ◽  
Curvature Measurements

Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements

2018 ◽  
Vol 20 (43) ◽  
pp. 27350-27360 ◽  
Author(s):  
Yuxi Ma ◽  
Jason D. Nicholas
Keyword(s):  
Electrochemical Properties ◽  
Material Properties ◽  
Current Collector ◽  
Doped Ceria ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Exchange Material ◽  
First Time ◽  
Electrochemical Oxygen

This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ, current-collector-free wafer curvature measurements.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Misfit Strain Relief Beyond the Critical Thickness Using Curvature Measurements and in Situ Characterization of the Magneto-Optic Kerr Effect

1994 ◽  
Vol 356 ◽  
Author(s):  
H. E. Inglefield ◽  
G. Bochi ◽  
C. A. Ballentine ◽  
R. C. O’Handley ◽  
C. V. Thompson
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Kerr Effect ◽  
Critical Thickness ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Magneto Optic

AbstractEpitaxial misfit has been characterized in Ni/Cu/Si (100) as a function of Ni film thickness using wafer curvature measurements. This strain can be related to measurements of magnetic anisotropy made in the deposition system using the magneto-optic Kerr effect. Films were deposited using molecular beam epitaxy (MBE) with varying Ni epilayer thickness between 10 and 1000Å. The change in wafer curvature due to misfit strain was measured using optical interferometry and the strain was calculated using Stoney’s equation. Transmission electron microscopy was used to characterize misfit dislocations at the Ni/Cu interface. It has been determined that misfit strain can have a very strong effect on magnetic anisotropy, particularly in the regime between the critical thickness and complete misfit accommodation, where strain has been found to decrease significantly as a function of film thickness. A critical strain has been determined at which a transition in the direction of magnetization easy axis from perpendicular to the film to in the film plane occurs. This discovery allows the use of Kerr effect measurements to characterize misfit strain in situ.

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

2000 ◽  
Vol 76 (18) ◽  
pp. 2538-2540 ◽  
Author(s):  
Byung Hak Lee ◽  
Kee Sun Lee ◽  
Dong Kyun Sohn ◽  
Jeong Soo Byun ◽  
Chang Hee Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Tungsten Nitride ◽  
Silicon Structure ◽  
Barrier Formation

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

1997 ◽  
Vol 18 (11) ◽  
pp. 526-528 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

2014 ◽  
Vol 59 (5) ◽  
pp. 711-715 ◽  
Author(s):  
E. A. Bogoyavlenskaya ◽  
V. I. Rudakov ◽  
Yu. I. Denisenko ◽  
V. V. Naumov ◽  
A. E. Rogozhin
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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