SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithography

Mona J. K. Klein; Franck Montagne; Nicolas Blondiaux; Oscar Vazquez-Mena; Harry Heinzelmann; Raphael Pugin; Juergen Brugger; Veronica Savu

doi:10.1116/1.3554404

SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithography

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3554404 ◽

2011 ◽

Vol 29 (2) ◽

pp. 021012 ◽

Cited By ~ 13

Author(s):

Mona J. K. Klein ◽

Franck Montagne ◽

Nicolas Blondiaux ◽

Oscar Vazquez-Mena ◽

Harry Heinzelmann ◽

...

Keyword(s):

Nanosphere Lithography ◽

Wafer Scale ◽

Hole Arrays

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Wafer-Scale Fabrication of Plasmonic Crystals from Patterned Silicon Templates Prepared by Nanosphere Lithography

Nano Letters ◽

10.1021/nl400755a ◽

2013 ◽

Vol 13 (6) ◽

pp. 2623-2627 ◽

Cited By ~ 43

Author(s):

Anthony Shoji Hall ◽

Stuart A. Friesen ◽

Thomas E. Mallouk

Keyword(s):

Nanosphere Lithography ◽

Wafer Scale ◽

Plasmonic Crystals

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Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

Journal of Nanomaterials ◽

10.1155/2014/439212 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

Di Di ◽

Xuezhong Wu ◽

Peitao Dong ◽

Chaoguang Wang ◽

Jian Chen ◽

...

Keyword(s):

High Throughput ◽

Crystalline Silicon ◽

Colloidal Crystal ◽

Cost Effective ◽

Wafer Scale ◽

Crystalline Silicon Solar Cells ◽

Cost Effective Method ◽

Nanohole Arrays ◽

Coating Method ◽

Hole Arrays

A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si), which is utilized for antireflection. Wafer-scale polystyrene (PS) monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection < 9%) at long wavelengths (>600 nm), which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

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