Plasma-enhanced chemical vapor deposition synthesis of silica-silicone nanolaminates using a single precursor

Rakhi P. Patel; Colin A. Wolden

doi:10.1116/1.3553149

Plasma-enhanced chemical vapor deposition synthesis of silica-silicone nanolaminates using a single precursor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3553149 ◽

2011 ◽

Vol 29 (2) ◽

pp. 021012 ◽

Cited By ~ 9

Author(s):

Rakhi P. Patel ◽

Colin A. Wolden

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor

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Chemical Vapor Deposition of HfO2Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Chemistry of Materials ◽

10.1021/cm050662t ◽

2005 ◽

Vol 17 (26) ◽

pp. 6713-6718 ◽

Cited By ~ 16

Author(s):

Taek S. Yang ◽

Ki-Seok An ◽

Eun-Joo Lee ◽

Wontae Cho ◽

Hong S. Jang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

The Novel ◽

Single Precursor

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One-step fabrication method of non-fouling amine-functionalized polyethylene glycol thin film using a single precursor through plasma-enhanced chemical vapor deposition

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2020.126384 ◽

2020 ◽

Vol 403 ◽

pp. 126384

Author(s):

Jaeyun Kim ◽

Hyun Kyong Shon ◽

Sunho Joh ◽

Donggeun Jung ◽

Hee-Kyung Na ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Polyethylene Glycol ◽

Vapor Deposition ◽

Chemical Vapor ◽

Fabrication Method ◽

Amine Functionalized ◽

One Step ◽

Single Precursor ◽

Non Fouling

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Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane

ECS Transactions ◽

10.1149/09805.0169ecst ◽

2020 ◽

Vol 98 (5) ◽

pp. 169-176

Author(s):

Takuma Doi ◽

Kentaro Hashimoto ◽

Wakana Takeuchi ◽

Osamu Nakatsuka

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Crystal Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Single Precursor

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Low-k SiCOH Films Deposited with a Single Precursor 1,1,1,3,5,7,7,7 Octamethyl-3,5-Bis(trimethylsiloxy) Tetrasiloxane by Plasma Enhanced Chemical Vapor Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17321 ◽

2020 ◽

Vol 20 (4) ◽

pp. 2301-2307

Author(s):

Sungyool Kwon ◽

Yoonsoo Park ◽

Wonjin Ban ◽

Younghyun Kim ◽

Junyoung Jang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor ◽

Low K

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Epitaxial LiTaO3thin film by pulsed metalorganic chemical vapor deposition from a single precursor

Applied Physics Letters ◽

10.1063/1.110230 ◽

1993 ◽

Vol 63 (23) ◽

pp. 3146-3148 ◽

Cited By ~ 41

Author(s):

Huyang Xie ◽

Rishi Raj

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor ◽

Metalorganic Chemical

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Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor.

ChemInform ◽

10.1002/chin.200430023 ◽

2004 ◽

Vol 35 (30) ◽

Author(s):

Myung M. Sung ◽

Chang G. Kim ◽

Yunsoo Kim

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor

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Effects of In-situ Doping on the Electrical and the Optical Characteristics of Anodized Polycrystalline 3C-SiC Thin Films Fabricated Using Chemical Vapor Deposition with a Single Precursor of Hexamethyldisilane

Journal of the Korean Physical Society ◽

10.3938/jkps.59.3097 ◽

2011 ◽

Vol 59 (5) ◽

pp. 3097-3100

Author(s):

Kang-San Kim ◽

Gwiy-Sang Chung

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optical Characteristics ◽

Single Precursor

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Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane

ECS Meeting Abstracts ◽

10.1149/ma2020-02241716mtgabs ◽

2020 ◽

Vol MA2020-02 (24) ◽

pp. 1716-1716

Author(s):

Doi Takuma ◽

Kentaro Hashimoto ◽

Wakana Takeuchi ◽

Osamu Nakatsuka

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Crystal Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Single Precursor

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Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

Physica B Condensed Matter ◽

10.1016/j.physb.2009.09.055 ◽

2010 ◽

Vol 405 (2) ◽

pp. 513-516 ◽

Cited By ~ 12

Author(s):

Kang-San Kim ◽

Ki-Bong Han ◽

Gwiy-Sang Chung

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor

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Chemical Vapor Deposition of β-LiGaO2Films on Si(100) Using a Novel Single Precursor

Bulletin of the Korean Chemical Society ◽

10.5012/bkcs.2004.25.4.480 ◽

2004 ◽

Vol 25 (4) ◽

pp. 480-484 ◽

Cited By ~ 1

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor

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