UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors

2010 ◽  
Vol 28 (6) ◽  
pp. 1100-1103 ◽  
Author(s):  
W. M. Tang ◽  
W. T. Ng ◽  
M. G. Helander ◽  
M. T. Greiner ◽  
Z. H. Lu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Dielectric Interface ◽  
Uv Ozone

scholarly journals Organic Thin-Film Transistors: Vibration-Assisted Crystallization Improves Organic/Dielectric Interface in Organic Thin-Film Transistors (Adv. Mater. 48/2013)

2013 ◽  
Vol 25 (48) ◽  
pp. 7054-7054
Author(s):  
Peter J. Diemer ◽  
Christopher R. Lyle ◽  
Yaochuan Mei ◽  
Christopher Sutton ◽  
Marcia M. Payne ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Dielectric Interface ◽  
Organic Dielectric

High mobility solution-processed C8-BTBT organic thin-film transistors via UV-ozone interface modification

2017 ◽  
Vol 5 (40) ◽  
pp. 10652-10659 ◽  
Author(s):  
Weiyao Wei ◽  
Cheng Yang ◽  
Jiaying Mai ◽  
Yanfen Gong ◽  
Longsen Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Ozone Exposure ◽  
Organic Thin Film ◽  
Interface Modification ◽  
Mobility Solution ◽  
Uv Ozone

UV-ozone exposure directly on the dielectric surface to get an OTFT mobility as high as 6.50 cm2(V s)−1.

Vibration-Assisted Crystallization Improves Organic/Dielectric Interface in Organic Thin-Film Transistors

2013 ◽  
Vol 25 (48) ◽  
pp. 6956-6962 ◽  
Author(s):  
Peter J. Diemer ◽  
Christopher R. Lyle ◽  
Yaochuan Mei ◽  
Christopher Sutton ◽  
Marcia M. Payne ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Dielectric Interface ◽  
Organic Dielectric

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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