High-aspect-ratio deep Si etching in SF6/O2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns

2010 ◽  
Vol 28 (4) ◽  
pp. 854-861 ◽  
Author(s):  
Takahiro Maruyama ◽  
Takeshi Narukage ◽  
Ryota Onuki ◽  
Nobuo Fujiwara
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Radical Reactions ◽  
O2 Plasma

Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF6/O2 plasma

2018 ◽  
Vol 57 (9) ◽  
pp. 098004
Author(s):  
Itsuko Sakai ◽  
Katsunori Yahashi ◽  
Satoshi Shimonishi ◽  
Makoto Sekine ◽  
Masaru Hori
Keyword(s):  
Aspect Ratio ◽  
Substrate Temperature ◽  
High Aspect Ratio ◽  
O2 Plasma

Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices

2021 ◽  
Vol 60 (3) ◽  
pp. 036001
Author(s):  
Tsubasa Imamura ◽  
Itsuko Sakai ◽  
Hisataka Hayashi ◽  
Makoto Sekine ◽  
Masaru Hori
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
O2 Plasma
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