High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

2010 ◽  
Vol 28 (4) ◽  
pp. 890-894 ◽  
Author(s):  
Yasutaka Nishi ◽  
Kento Hirohata ◽  
Naoki Tsukamoto ◽  
Yasushi Sato ◽  
Nobuto Oka ◽  
...  
Keyword(s):  
Control System ◽  
Impedance Control ◽  
Sputter Deposition ◽  
High Rate ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Doped Zno ◽  
Magnetron Sputter

High rate reactive magnetron sputter deposition of titanium oxide

2008 ◽  
Vol 92 (22) ◽  
pp. 221501 ◽  
Author(s):  
T. Kubart ◽  
D. Depla ◽  
D. M. Martin ◽  
T. Nyberg ◽  
S. Berg
Keyword(s):  
Titanium Oxide ◽  
Sputter Deposition ◽  
High Rate ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition

1996 ◽  
Vol 287 (1-2) ◽  
pp. 87-92 ◽  
Author(s):  
H. Ljungcrantz ◽  
S. Benhenda ◽  
G. Håkansson ◽  
I. Ivanov ◽  
L. Hultman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

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